Journal ArticleDOI
Microwave transistors: Theory and design
H.F. Cooke
- Vol. 59, Iss: 8, pp 1163-1181
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TLDR
In this paper, a condensed description of the design and processing steps for a silicon microwave transistor is given, including active and inactive elements, and the types of high-frequency measurements used in the design of transistors.Abstract:
Microwave transistors are useful as small-signal amplifiers to 6 GHz and power amplifiers to 4 GHz. Nearly all microwave transistors are of the silicon planar type. Power transistors use three types of geometries--interdigitated, overlay, and mesh--while small-signal transistors use interdigitated only. The general theory of the frequency response of transistors is reviewed, including active and inactive elements. A condensed description of the design and processing steps for a silicon microwave transistor is given. A final section deals with the types of high-frequency measurements used in the design and analysis of transistors.read more
Citations
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Journal ArticleDOI
Analysis of nonlinear systems with multiple inputs
TL;DR: Analytical modeling of communication receivers to account for their nonlinear response to multiple input signals is discussed, based on the application of the Wiener-Volterra analysis of nonlinear functionals.
Book
Fundamentals of RF and Microwave Transistor Amplifiers
TL;DR: A comprehensive and up-to-date treatment of RF and microwave transistor amplifiers is provided in this article, including modeling, analysis, design, packaging, and thermal and fabrication considerations.
Journal ArticleDOI
Fabrication and numerical simulation of the permeable base transistor
C.O. Bozler,G.D. Alley +1 more
TL;DR: In this article, a new transistor structure has been reported in which a thin tungsten grating has been embedded inside a single crystal of gallium arsenide, which is the base of the transistor and can be used to raise and lower a potential barrier in the semiconductor between the grating lines.
Journal ArticleDOI
Power gain in feedback amplifiers, a classic revisited
TL;DR: A tutorial review of a classic paper by Samuel J. Mason (1954), which contained the first definition of a unilateral power gain for a linear two-port and the first proof that this grain is invariant with respect to linear lossless reciprocal four-port embeddings, is described.
Journal ArticleDOI
Limitations of Nielsen's and related noise equations applied to microwave bipolar transistors, and a new expression for the frequency and current dependent noise figure
TL;DR: In this paper, a new expression is developed to take into account the emitter time constant, and this gives good agreement with measurements of minimum noise figure up to 3 GHz, and over a wide range of emitter current.
References
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Journal ArticleDOI
Resistivity of bulk silicon and of diffused layers in silicon
TL;DR: In this paper, the resistivity and impurity concentration in heavily doped silicon are reported and incorporated in a graph showing the resistivities (at T = 300°K) of n-and p-type silicon as a function of donor or acceptor concentration.
Journal ArticleDOI
A theory of transistor cutoff frequency (f T ) falloff at high current densities
TL;DR: In this paper, it was shown that the observed falloff in the f T of a transistor at high currents is due to the spreading of the neutral base layer into the collector region of the device at high current densities.
Journal ArticleDOI
Power Gain in Feedback Amplifier
TL;DR: In this paper, a linear three-terminal device Z is imbedded in a lossless passive network N and the properties of the complete system, as measured at two specified terminal pairs, are described by the open-circuit impedances Z_{11, Z_{12}, Z_{21, and Z_22.
Journal ArticleDOI
Effect of junction curvature on breakdown voltage in semiconductors
S.M. Sze,G. Gibbons +1 more
TL;DR: In this paper, the effect of the radius of curvature of the metallurgical junction (or junction curvature) on avalanche breakdown voltage is computed numerically for spherical and cylindrical p-n junctions in Ge, Si, GaAs and GaP.
Journal ArticleDOI
Ion implantation in semiconductors—Part I: Range distribution theory and experiments
TL;DR: Theoretical and experimental work pertinent to the problem of predicting impurity distribution profiles in ion-implanted material are reviewed in Part II as mentioned in this paper, together with the characteristics of a number of interesting semiconductor devices that have already been fabricated by ion implantation.