Journal ArticleDOI
Minority Carrier Diffusion Length in AlGaN: A Combined Electron Beam Induced Current and Transmission Microscopy Study
Ana Cremades,Martin Albrecht,Axel Voigt,J. Krinke,Roman Dimitrov,Oliver Ambacher,Martin Stutzmann +6 more
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Abstract:
Combined electron beam induced current and transmission electron microscopy measurements have been performed on both undoped and Si-doped AlGaN epitaxial films with aluminium contents x ranging from x=0 to x=0.79. TEM analysis shows the distribution and type of structural defects, the content of cubic phase and the decomposition phenomena strongly to depend on the Al content of the layers. The influence of the cubic phase on the electronic properties of the samples is discussed taking into account the high piezoelectric effect present in these alloys. The diffusion length of minority carriers has been determined by EBIC measurements and a lower limit of the lifetime has been estimated.read more
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Journal ArticleDOI
Minority carrier transport in GaN and related materials
TL;DR: In this article, the authors summarized the available information on the subject of minority carrier transport in ZnO-based semiconductors, focusing on its temperature dependence and the dynamics of nonequilibrium carrier recombination.
Journal ArticleDOI
Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope
Martin Albrecht,Horst P. Strunk,Jan L. Weyher,Izabella Grzegory,S. Porowski,Tadeusz Wosinski +5 more
TL;DR: In this paper, the authors studied radiative and nonradiative recombination at individual dislocations in GaN by cathodoluminescence performed in a transmission electron microscope.
Journal ArticleDOI
Minority electron transport anisotropy in p-type Al/sub x/Ga/sub 1-x/N/GaN superlattices
TL;DR: In this article, the minority electron diffusion length, L, in Mg-doped molecular beam epitaxy (MBE) grown p-type Al/sub x/Ga/sub 1-x/N/GaN superlattices with aluminum content x=0.1 and 0.2 was measured perpendicular and parallel to the super-lattice planes by the electron beam induced current technique.
Investigation of PN junction delineation resolution using electron beam induced current
TL;DR: In this paper, the authors investigated the use of electron beam induced current (EBIC) for determining semiconductor material and device parameters using a 300 keV transmission electron microscope (TEM) for PN junction depth determination.
Minority Electron Transport Anisotropy in P-Type Al Ga N/GaN Superlattices
TL;DR: In this paper, the minority electron diffusion length in Mg-doped molecular beam epitaxy (MBE) grown p-type Al Ga1 N/GaN superlattices with aluminum content = 0 1 and 0.2 was measured perpendicular and parallel to the super-lattice planes by the EBIC technique.