Journal ArticleDOI
MOCVD growth and characterization of GaAs and GaP grown on Si substrates
TLDR
In this article, GaP and GaAs are characterized by double crystal X-ray diffraction, photoluminescence and transmission electron microscopy and the thermal cycle growth is employed for GaAs on Si to reduce the dislocation density.About:
This article is published in Journal of Crystal Growth.The article was published on 1988-01-01. It has received 26 citations till now. The article focuses on the topics: Superlattice & Photoluminescence.read more
Citations
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Plastic relaxation and relaxed buffer layers for semiconductor epitaxy
TL;DR: In this article, a critical review of the strategies used in the fabrication of mismatched semiconductor heterostructures is presented, using simple concepts derived from the Matthews model of misfit relief.
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Direct evidence for self‐annihilation of antiphase domains in GaAs/Si heterostructures
TL;DR: In this paper, the antiphase boundaries in GaAs/Si heterostructures using GaP, GaP/GaAsP, and GaAsP/GAAs strained-layer superlattices as intermediate layers have been studied by transmission electron microscopy.
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Low etch pit density GaAs on Si grown by metalorganic chemical vapor deposition
TL;DR: In this paper, the dislocation density decreases at the interface between GaAs and the superlattice, but does not decrease in the SLS, and the low etch pit density of (3-5)×105 cm−2 was obtained by using the intermediate layer of a GaAs/GaAsP SLS with thermal cycle annealing.
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Relaxed lattice-mismatched growth of III–V semiconductors
TL;DR: In this article, the lattice matching condition severely limits the number of possible material combinations that can be used in the relaxed combination of III-V semiconductors with lattice mismatched substrates.
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Heteroepitaxial technologies on Si for high-efficiency solar cells
TL;DR: In this paper, the performance of the AlGaAs/Si tandem solar cells with varying the growth conditions was evaluated by photoluminescence, deep level transient spectroscopy, and double crystal X-ray diffraction while varying the thermal cycle annealing temperature.
References
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Journal ArticleDOI
Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
TL;DR: In this article, single domain GaAs layers with satisfactory morphology were grown on (100)-oriented Si substrates by heat treatment of the substrates at above 900°C and subsecquent two-step growth at low temperatures of 450°C or below and by conventional growth temperatures.
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Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates
TL;DR: In this article, post growth thermal annealing has been used to reduce the defect density of GaAs layers grown on Si substrates by molecular beam epitaxy, and transmission electron microscopy indicates a 100× reduction of the true defect density.
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Growth of GaAs on Si by MOVCD
TL;DR: In this paper, a GaAs layer with a mirror surface was grown on a (100)-oriented Si substrate by MOVCD and the combination of thin GaAs layers grown at low temperatures and GaAs/GaAlAs alternating layers at conventional growth temperatures was found to be effective as a buffer layer.
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Effect of in situ and ex situ annealing on dislocations in GaAs on Si substrates
TL;DR: In this article, gallium arsenide layers grown by molecular beam epitaxy on (100)Si substrates were subjected to annealing under As overpressure at 650, 750, and 850°C for 1/2 h.
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Optical and structural properties of GaAs grown on (100) Si by molecular‐beam epitaxy
TL;DR: In this paper, GaAs epitaxial layers (0.5 μm