Journal ArticleDOI
Modeling Non-Quasi-Static Effects in SiGe HBTs Using Improved Charge Partitioning Scheme
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TLDR
In this paper, the applicability of a partitioned-charge-based non-quasi-static (NQS) model is investigated using exact solutions for 1-D bipolar transistors.Abstract:
The applicability of a partitioned-charge-based non-quasi-static (NQS) model is investigated using exact solutions for 1-D bipolar transistors. Limitations of the model to accurately predict $y_{21}(\omega)$ are overcome by further delaying the partitioned minority charge associated with the collector. A corresponding small-signal time-domain model is derived. The proposed model effectively includes the delays within both the quasi-neutral base and base–collector space-charge regions. Using only two extra nodes over the quasi-static bipolar transistor model HICUM, the NQS model is implemented using Verilog-A. The simplicity of the model yields straightforward parameter extraction techniques. Modeling results show excellent agreement with numerically simulated data.read more
Citations
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Extended Charge-Control Model For Bipolar Transistors
TL;DR: In this article, it is shown that a considerable improvement can be obtained when the concept is extended by allowing time delays in the relations between controlling charges and terminal voltages and currents.
Journal ArticleDOI
Graded Applications of NQS Theory for Modeling Correlated Noise in SiGe HBTs
TL;DR: A correlated noise model for bipolar transistors from an accurate nonquasi-static model that includes the signal delay through base-collector space-charge region and is implemented using four extra nodes is developed.
Proceedings ArticleDOI
Efficient models for non-quasi-static effects and correlated noise in SiGe HBTs
TL;DR: In this paper, the capability of a single CR sub-circuit to model a wide range of non-quasi-static (NQS) delays in silicon germanium heterojunction bipolar transistors is explored.
Proceedings ArticleDOI
Modeling minority charge partitioning factor in SiGe HBTs using full regional approach
Noel Augustine,Anjan Chakravorty +1 more
TL;DR: In this paper, the minority charge partitioning effect in silicon germanium heterojunction bipolar transistors was shown to exist even in the low-frequency quasi-static regime, and a comprehensive bias-dependent model was developed using full regional approach coupled with the transient integral charge control theory.
References
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Book
Compact Hierarchical Bipolar Transistor Modeling with Hicum
TL;DR: This book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology.
Proceedings ArticleDOI
How to (and how not to) write a compact model in Verilog-A
TL;DR: This work provides a quick introduction to writing compact models in Verilog-A and, by indicating the sorts of techniques that compact model writers may use, helps simulator vendors understand the sort of optimizations that are expected from their Verilogy-A interfaces.
Journal ArticleDOI
Extended charge-control model for bipolar transistors
TL;DR: In this paper, it is shown that a considerable improvement can be obtained when the concept is extended by allowing time delays in the relations between controlling charges and terminal voltages and currents.
Journal ArticleDOI
Transient and small‐signal high‐frequency simulation of numerical device models embedded in an external circuit
TL;DR: A program for numerical simulation of two‐dimensional semiconductor devices coupled with an external circuit using a two‐level Newton method and an efficient bypassing scheme was developed for the linearization scheme, showing a significant speed advantage of the secant method despite its lower rate of convergence.
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