Modified EAS Tag Used as a Resistive Sensor Platform
Henrik Andersson,Krister Hammarling,Johan Sidén,Anatoliy Manuilskiy,Thomas Öhlund,Hans-Erik Nilsson +5 more
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In this paper, a modified design of an RF Radio Frequency Electronic Article Surveillance (EAS) tag, used as a sensor platform, is manufactured and characterized, and two types of tags are designed and manufactured, one with parallel plate capacitors and the other with interdigital capacitors.Abstract:
In this article, a modified design of an RF Radio Frequency Electronic Article Surveillance (EAS) tag, used as a sensor platform, is manufactured and characterized. EAS tags are passive devices consisting of a capacitor and coil, tuned to a resonance frequency readable by the detector equipment, in this case 8.2 MHz. They were originally used to detect whether merchandise was being moved through the detection gates at shop exits, in which case an alarm was triggered. If the capacitance is divided in two and a resistive sensor device inserted in between, the resonant Inductor-Capacitor (LC) circuit becomes an Inductor-Capacitor-Capacitor-Resistor LCCR circuit and can be used as a sensor tag. A high sensor resistance means that one capacitor is decoupled, leading to one resonance frequency, while a low resistance will couple both capacitances into the circuit, resulting in a lower resonance frequency. Different types of resistive sensors exist that are able to detect properties such as pressure, moisture, light and temperature. The tag is manufactured in Aluminum foil on a polyetylentereftalat (PET) substrate, resulting in a cost effective RF-platform for various resistive sensors. Two types of tags are designed and manufactured, one with parallel plate capacitors and the other with interdigital capacitors. To test the tags, a resistive tilt sensor is mounted and the tags are characterized using a network analyzer. It is shown that for high resistance, the tags have a resonance frequencyread more
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References
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TL;DR: The most up-to-date resource available on antenna theory and design as mentioned in this paper provides an extended coverage of ABET design procedures and equations making meeting ABET requirements easy and preparing readers for authentic situations in industry.
Journal ArticleDOI
Combined differential and common-mode scattering parameters: theory and simulation
Abstract: A theory for combined differential and common-mode normalized power waves is developed in terms of even and odd mode impedances and propagation constants for a microwave coupled line system. These are related to even and odd-mode terminal currents and voltages. Generalized s-parameters of a two-port are developed for waves propagating in several coupled modes. The two-port s-parameters form a 4-by-4 matrix containing differential-mode, common-mode, and cross-mode s-parameters. A special case of the theory allows the use of uncoupled transmission lines to measure the coupled-mode waves. Simulations verify the concept of these mixed-mode s-parameters, and demonstrate conversion from mode to mode for asymmetric microwave structures. >
Journal ArticleDOI
Foldable Printed Circuit Boards on Paper Substrates
Adam C. Siegel,Scott T. Phillips,Michael D. Dickey,Nanshu Lu,Zhigang Suo,George M. Whitesides +5 more
TL;DR: Paper as discussed by the authors describes several low-cost methods for fabricating flexible electronic circuits on paper, which include metallic wires (e.g., tin or zinc) that are deposited on the substrate by evaporation, sputtering, or airbrushing, and discrete surface-mountable electronic components that are fastened with conductive adhesive directly to the wires.
Journal ArticleDOI
Progress Toward Development of All-Printed RFID Tags: Materials, Processes, and Devices
Vivek Subramanian,Jean M. J. Fréchet,Paul Chang,D. C. Huang,J.B. Lee,Steven Molesa,Amanda R. Murphy,D.R. Redinger,Steven K. Volkman +8 more
TL;DR: Progress is reported on in developing materials, processes, and devices for the realization of ultralow-cost printed RFID tags using novel pentacene and oligothiophene precursors for pMOS and ZnO nanoparticles for nMOS.