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Mos (Metal Oxide Semiconductor) Physics and Technology
TLDR
In this article, the authors present a method for extracting interface trap properties from the conductance of a metal oxide Silicon Capacitor at intermediate and high frequency intervals, and demonstrate that these properties can be used for charge trapping in the oxide.Abstract:
Introduction. Field Effect. Metal Oxide Silicon Capacitor at Low Frequencies. Metal Oxide Silicon Capacitor at Intermediate and High Frequencies. Extraction of Interface Trap Properties from the Conductance. Interfacial Nonuniformities. Experimental Evidence for Interface Trap Properties. Extraction of Interface Trap Properties from the Capacitance. Measurement of Silicon Properties. Charges, Barrier Heights, and Flatband Voltage. Charge Trapping in the Oxide. Instrumentation for Measuring Capacitor Characteristics. Oxidation of Silicon--Oxidation Kinetics. Oxidation of Silicon--Technology. Control of Oxide Charges. Models of the Interface. Appendices. Subject Index. Symbol Index.read more
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High-κ gate dielectrics: Current status and materials properties considerations
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Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise
M J Kirton,M J Uren +1 more
TL;DR: In very small electronic devices, the alternate capture and emission of carriers at an individual defect site generates discrete switching in the device resistance, referred to as a random telegraph signal (RTS) as mentioned in this paper.
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Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon
TL;DR: In this article, two mechanisms triggered by electron heating in the oxide conduction band are discussed: trap creation and band gap ionization by carriers with energies exceeding 2 and 9 eV, respectively.
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Memory effects in complex materials and nanoscale systems
TL;DR: The memory properties of various materials and systems which appear most strikingly in their non-trivial, time-dependent resistive, capacitative and inductive characteristics are described within the framework of memristors, memcapacitors and meminductors.
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Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications
TL;DR: In this article, the authors present the present knowledge on tantalum pentoxide (Ta 2 O 5 ) thin films and their applications in the field of microelectronics and integrated microtechnologies.