Nanoscale thermal transport
David G. Cahill,Wayne K. Ford,Kenneth E. Goodson,Gerald D. Mahan,Arun Majumdar,Humphrey J. Maris,Roberto Merlin,Simon R. Phillpot +7 more
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TLDR
A review of the literature on thermal transport in nanoscale devices can be found in this article, where the authors highlight the recent developments in experiment, theory and computation that have occurred in the past ten years and summarizes the present status of the field.Abstract:
Rapid progress in the synthesis and processing of materials with structure on nanometer length scales has created a demand for greater scientific understanding of thermal transport in nanoscale devices, individual nanostructures, and nanostructured materials. This review emphasizes developments in experiment, theory, and computation that have occurred in the past ten years and summarizes the present status of the field. Interfaces between materials become increasingly important on small length scales. The thermal conductance of many solid–solid interfaces have been studied experimentally but the range of observed interface properties is much smaller than predicted by simple theory. Classical molecular dynamics simulations are emerging as a powerful tool for calculations of thermal conductance and phonon scattering, and may provide for a lively interplay of experiment and theory in the near term. Fundamental issues remain concerning the correct definitions of temperature in nonequilibrium nanoscale systems. Modern Si microelectronics are now firmly in the nanoscale regime—experiments have demonstrated that the close proximity of interfaces and the extremely small volume of heat dissipation strongly modifies thermal transport, thereby aggravating problems of thermal management. Microelectronic devices are too large to yield to atomic-level simulation in the foreseeable future and, therefore, calculations of thermal transport must rely on solutions of the Boltzmann transport equation; microscopic phonon scattering rates needed for predictive models are, even for Si, poorly known. Low-dimensional nanostructures, such as carbon nanotubes, are predicted to have novel transport properties; the first quantitative experiments of the thermal conductivity of nanotubes have recently been achieved using microfabricated measurement systems. Nanoscale porosity decreases the permittivity of amorphous dielectrics but porosity also strongly decreases the thermal conductivity. The promise of improved thermoelectric materials and problems of thermal management of optoelectronic devices have stimulated extensive studies of semiconductor superlattices; agreement between experiment and theory is generally poor. Advances in measurement methods, e.g., the 3ω method, time-domain thermoreflectance, sources of coherent phonons, microfabricated test structures, and the scanning thermal microscope, are enabling new capabilities for nanoscale thermal metrology.read more
Citations
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Journal ArticleDOI
Thermal boundary resistance of nanocomposites
TL;DR: In this article, the authors developed a general framework for the calculation of thermal boundary resistance between a substrate and a composite, which is dependent on the phonon equilibrium intensity and the transmissivity of phonons across the interface.
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Thermal conductivity and refractive index of hafnia-alumina nanolaminates
TL;DR: This paper showed that the interface thermal resistance in hafnia-alumina nanolaminates is very low and does not dominate the film thermal conductivity, which is 1.0 to 1.2 W/(m K) at room temperature in 100 nm thin films regardless of the interface density.
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Solid-state thermal control devices
TL;DR: In this article, the recent progress in the four broad categories of solid-state thermal control devices that are under active research is reviewed: diodes, switches, regulators, and transistors.
Journal ArticleDOI
Graphene-Au nanoparticle based vertical heterostructures: A novel route towards high-ZT Thermoelectric devices
Zhen-Yu Juang,Chien Chih Tseng,Yumeng Shi,Yumeng Shi,Wen-Pin Hsieh,Sou Ryuzaki,Noboru Saito,Chia-En Hsiung,Wen-Hao Chang,Yenny Hernandez,Yu Han,Kaoru Tamada,Lain-Jong Li +12 more
TL;DR: In this article, a cross-plane TE device based on the vertical heterostructures of few-layer graphene and gold nanoparticles (AuNPs) on Si substrates was proposed.
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Thermal boundary conductance of transition metals on diamond
Christian Monachon,Ludger Weber +1 more
TL;DR: In this paper, an experimental process that was used to obtain a direct measurement of Thermal Boundary Conductance (TBC) between a diamond substrate and several transition metals, deposited by sputtering, is described.
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