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Native defect compensation iniii-antimonide bulk substrates
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The article was published on 2004-01-01 and is currently open access. It has received 1 citations till now. The article focuses on the topics: Antimonide.read more
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Journal Article
High performance InAs/Ga1-xInxSb superlattice infrared photodiodes
F. Fuchs,U. Weimer,Wilfried Pletschen,J. Schmitz,E. Ahlswede,M. Walthef,J. Wagner,Peter Koidl +7 more
TL;DR: In this article, the optical and electrical properties of infrared photodiodes diodes based on InAs/(GaIn)Sb superlattices grown by molecular beam epitaxy were investigated.
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Journal ArticleDOI
High performance InAs/Ga1-xInxSb superlattice infrared photodiodes
Frank Fuchs,U. Weimer,Wilfried Pletschen,Johannes Schmitz,E. Ahlswede,Markus Walther,Joachim Wagner,Peter Koidl +7 more
TL;DR: In this article, the optical and electrical properties of infrared photodiodes diodes based on InAs/(GaIn)Sb superlattices grown by molecular beam epitaxy were investigated.
BookDOI
Thin Films: Heteroepitaxial Systems
W. K. Liu,B. Michael Santos +1 more
TL;DR: In this article, the growth and structure of epitaxial metal-oxide/metal interfaces heteroepitaxy of disparate materials -from chemisorption to epitaxy in CaF2/Si (111) was discussed.
Journal ArticleDOI
AlSb/InAs HEMT's for low-voltage, high-speed applications
J.B. Boos,Walter Kruppa,Brian R. Bennett,Doewon Park,S.W. Kirchoefer,Robert Bass,Harry B. Dietrich +6 more
TL;DR: In this article, the design, fabrication, and characterization of 0.1 /spl mu/m AlSb/InAs HEMT's are reported, which exhibit a transconductance of 600 mS/mm and an f/sub T/L/sub g/m product of 50 GHz-/spl µ/m.
Journal ArticleDOI
High-temperature continuous-wave 3–6.1 μm “W” lasers with diamond-pressure-bond heat sinking
William W. Bewley,Christopher L. Felix,Igor Vurgaftman,Donna W. Stokes,Edward H. Aifer,Linda J. Olafsen,Jerry R. Meyer,M. J. Yang,B. V. Shanabrook,H. Lee,Ramon U. Martinelli,A.R. Sugg +11 more
TL;DR: In this paper, a diamond-pressure-bonding technique for heat sinking the semiconductor laser was used to achieve a temperature of 290 K at 3.0μm and 210 K at 6.1μm.