New routes to sustainable photovoltaics: evaluation of Cu2ZnSnS4 as an alternative absorber material
Jonathan J. Scragg,Philip J. Dale,Philip J. Dale,Laurence M. Peter,Guillaume Zoppi,Ian Forbes +5 more
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TLDR
In this article, films of the p-type absorber Cu2ZnSnS4 (CZTS) were prepared by electroplating metallic precursors sequentially onto a molybdenum-coated glass substrate followed by an nealing in a sulfur atmosphere.Abstract:
Thin film heterojunction solar cells based on chalcopyrites such as Cu(In,Ga)Se2 have achieved impressive efficiencies. However concern about the long term sustainability of photovoltaics based on scarce or expensive raw materials has prompted the search for alternative absorber materials. In this work, films of the p-type absorber Cu2ZnSnS4 (CZTS) were prepared by electroplating metallic precursors sequentially onto a molybdenum-coated glass substrate followed by an nealing in a sulfur atmosphere. The polycrystalline CZTS films were characterized by photoelectrochemical methods, which showed films were p-type with doping densities of the order of 1016 cm–3 and a band gap of 1.49 eV, close to the optimum value for terrestrial solar energy conversion. Preliminary results obtained for solar cells fabricated with this material are promising. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)read more
Citations
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The path towards a high-performance solution-processed kesterite solar cell ☆
TL;DR: In this article, the development of kesterite-based Cu 2 ZnSn(S,Se) 4 (CZTSSe) thin-film solar cells, in which the indium and gallium from CIGSSe are replaced by the readily available elements zinc and tin, is reviewed.
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Classification of lattice defects in the kesterite Cu2ZnSnS4 and Cu2ZnSnSe4 earth-abundant solar cell absorbers.
TL;DR: The calculated properties explain the experimental observation that Cu poor and Zn rich conditions result in the highest solar cell efficiency, as well as suggesting an efficiency limitation in Cu2ZnSn(S,Se)4 cells when the S composition is high.
Journal ArticleDOI
Thin film solar cell with 8.4% power conversion efficiency using an earth‐abundant Cu2ZnSnS4 absorber
TL;DR: In this paper, a vacuum process was used to construct a pure sulfide Cu2ZnSnS4 solar cell with 8.4% efficiency, a number independently certified by an external, accredited laboratory.
Journal ArticleDOI
Crystal and electronic band structure of Cu2ZnSnX4 (X=S and Se) photovoltaic absorbers: First-principles insights
TL;DR: In this paper, the structural and electronic properties of Cu2ZnSnS4 and Cu2znSnSe4 were studied using first-principles calculations and it was shown that the low energy crystal structure obeys the octet rule and is the kesterite structure.
Journal ArticleDOI
Solution-Based Synthesis and Characterization of Cu2ZnSnS4 Nanocrystals
TL;DR: In-depth characterization indicated that pure stoichiometric CZTS nanocrystals with an average particle size of 12.8 +/- 1.8 nm were formed, and optical measurements showed a band gap of 1.5 eV, which is optimal for a single-junction solar device.
References
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Journal ArticleDOI
Electrical and Optical Properties of Stannite-Type Quaternary Semiconductor Thin Films
Kentaro Ito,Tatsuo Nakazawa +1 more
TL;DR: In this paper, quaternary stannite-type semiconductor films of Cu2CdSnS4 and Cu2ZnSnSS4 with (112) orientation were deposited on heated glass substrates using atom beam sputtering.
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Preparation and evaluation of Cu2ZnSnS4 thin films by sulfurization of EB evaporated precursors
TL;DR: In this article, the X-ray diffraction pattern of CZTS thin films showed that these films had a stannite structure, and the optical band gap energy was estimated as 1.45 eV.
Journal ArticleDOI
Chalcopyrite thin film solar cells by electrodeposition
Daniel Lincot,Jean-François Guillemoles,Stephane Taunier,Denis Guimard,J. Sicx-Kurdi,A. Chaumont,O. Roussel,O. Ramdani,Cédric Hubert,J.P. Fauvarque,N. Bodereau,L. Parissi,P. Panheleux,P. Fanouillere,Negar Naghavi,Pierre-Philippe Grand,Moez Benfarah,Paul C. Mogensen,O. Kerrec +18 more
TL;DR: In this article, the state of the art in using electrodeposition to prepare chalcopyrite absorber layers in thin film solar cells is reviewed and the manufacturability of the corresponding process to large areas is presented.
Journal ArticleDOI
Cu2ZnSnS4-type thin film solar cells using abundant materials
Kazuo Jimbo,Ryoichi Kimura,Tsuyoshi Kamimura,Satoru Yamada,Win Shwe Maw,Hideaki Araki,Koichiro Oishi,Hironori Katagiri +7 more
TL;DR: In this article, an inline-type vacuum apparatus is firstly introduced to acquire higher quality of CZTS films, and Inductively Coupled Plasma Spectroscopy (ICPS) is used to analyze the minute material composition of thin-film solar cells.
Journal ArticleDOI
Preparation of Cu2ZnSnS4 thin films by hybrid sputtering
Tooru Tanaka,Takeshi Nagatomo,Daisuke Kawasaki,Mitsuhiro Nishio,Qixin Guo,Akihiro Wakahara,Akira Yoshida,Hiroshi Ogawa +7 more
TL;DR: In this paper, a hybrid sputtering system with two sputter sources and two effusion cells is used to fabricate Cu 2 ZnSnS 4 thin films by sequential deposition of metal elements and annealing in S flux, varying the substrate temperature.
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