High‐Efficiency Solar Cell with Earth‐Abundant Liquid‐Processed Absorber

TLDR: A non-vacuum, slurry-based coating method that combines advantages of both solution processing and particlebased deposition is shown, enabling fabrication of Cu2ZnSn(Se,S)4 devices with over 9.6% efficiency—a factor of five performance improvement relative to previous attempts to use highthroughput ink-based approaches and >40% higher than previous record devices prepared using vacuum-based methods.

Abstract: 2010 WILEY-VCH Verlag Gmb Chalcogenide-based solar cells provide a critical pathway to cost parity between photovoltaic (PV) and conventional energy sources. Currently, only Cu(In,Ga)(S,Se)2 (CIGS) and CdTe technologies have reached commercial module production with stable power conversion efficiencies of over 9 percent. Despite the promise of these technologies, restrictions on heavy metal usage for Cd and limitations in supply for In and Te are projected to restrict the production capacity of the existing chalcogen-based technologies to <100GWp per year, a small fraction of our growing energy needs, which are expected to double to 27 TW by 2050. Earth-abundant copper-zinc-tin-chalcogenide kesterites, Cu2ZnSnS4 and Cu2ZnSnSe4, have been examined as potential alternatives for the two leading technologies, reaching promising but not yet marketable efficiencies of 6.7% and 3.2%, respectively, by multilayer vacuum deposition. Here we show a non-vacuum, slurry-based coating method that combines advantages of both solution processing and particlebased deposition, enabling fabrication of Cu2ZnSn(Se,S)4 devices with over 9.6% efficiency—a factor of five performance improvement relative to previous attempts to use highthroughput ink-based approaches and >40% higher than previous record devices prepared using vacuum-based methods. To address the issue of cost, non-vacuum ‘‘ink’’-based approaches—both from solutions and suspensions—are being developed for chalcogenide-based absorber layer deposition to replace potentially more expensive vacuum-based techniques. True solutions allow intermixing of the constituents at a molecular level and the formation of smooth homogeneous films, as demonstrated with spin-coated CIGS absorber layers from hydrazine (N2H4) solutions. [11–13] The chemically reducing character of hydrazine stabilizes solutions of anions with direct metal-chalcogen bonding for select elements (e.g. Cu, In, Ga, Sn), without the necessity to introduce typical impurities (e.g., C, O, Cl). Suspension approaches employ solid particles designed to be deposited on a substrate and reacted or fused with each other, to form a desired crystalline phase and grain structure. Normally insoluble components can be deposited by this approach using typical liquid-based deposition (e.g., printing, spin coating, slit casting, spraying). Although high-quality large-grained absorber layers can be formed for selected systems using either solutionor particlebased deposition, numerous challenges confront each approach for more general deposition needs. Solution processing is limited by the solubility of many materials of interest (e.g., ZnSe1–xSx in hydrazine solvents—relevant for the deposition of Cu2ZnSnS4 or Cu2ZnSnSe4). In addition, volume contraction upon drying of solution-deposited layers creates stress in the film that may cause crack formation in thicker films. In suspension approaches, a common difficulty is achieving single-phase crystallization among the solid particles. Particle-based approaches (as well as some solution methods) typically require the addition of organic agents to improve wetting and particle dispersion, and to avoid film cracks and delamination. Most of these non-volatile organic additives introduce carbon contamination in the final layer. Because of these challenges, vacuum-based techniques have historically shown superior performance to liquid coating. In the case of the earth-abundant Cu2ZnSn(S,Se)4 materials, ink-based approaches have to date yielded at most <1.6% efficiency devices. Here we demonstrate an hybrid solution-particle approach, using the earth-abundant Cu2ZnSn(S,Se)4 system as an example, which enables fabrication of PV devices with over 9.6% power conversion efficiency. The slurry (or ink) employed for deposition comprises a Cu–Sn chalcogenide (S or S–Se) solution in hydrazine (see Experimental section), with the in situ formation of readily dispersible particle-based Zn-chalcogenide precursors, ZnSe(N2H4) (Figure 1a,d) or ZnS(N2H4) (Figure 1b). Thermogravimetric analysis (TGA) of the isolated selenide particle precursor shows decomposition at approximately 200 8C, with mass loss of about 20%, close to the theoretical value expected upon transition to pure ZnSe (Figure 1c,d). Deposition using this hybrid slurry successfully combines the advantages of solution and suspension deposition routes by use of solutions containing solid particles, wherein both components (i.e., solution and particle) contain metal and chalcogen elements that integrate into the final film. Using the hybrid slurry method (i) solubility limitations are resolved, as virtually any materials system can be constituted by a combination of solid and dissolved components; (ii) the dissolved components can be engineered as an efficient binding media for the particles, eliminating the need of separate organic binders; (iii) solid particles act as stress-relief and crack-deflection centers allowing the deposition of thicker layers than pure solution processes; and (iv) the intimate contact between the two phases allows rapid reaction and homogeneous phase formation. Complete conversion of all constituents of the spin-coated hybrid precursor films into a single-phase, highly crystalline Cu2ZnSn(S,Se)4 is achieved by annealing at 540 8C on a hot plate. Three main types of samples were targeted – high selenium content (A), intermediate sulfoselenide (B) and pure sulfide (C) –