Journal ArticleDOI
Novel sub-100 nm thin film transistors
TLDR
In this article, a new method is introduced for fabricating metal electrodes for thin film field effect transistors having a source to drain distance in the sub-100 nm range, based on a liftoff process with sidewall spacers.Abstract:
A new method is introduced for fabricating metal electrodes for thin film field-effect transistors having a source to drain distance in the sub-100 nm range The method is based on a liftoff process with sidewall spacers and it is demonstrated by fabricating sub-100 nm polymer transistors These are to the authors' knowledge the smallest polymer transistors reportedread more
Citations
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Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films
TL;DR: In this article, a gate voltage modulation of the source-to-drain tunnel current is demonstrated for the 30 nm gate length device with a record subthreshold slop of 350 mV/decade and a cutoff frequency of 20 kHz.
Journal ArticleDOI
Attaching Organic Semiconductors to Gate Oxides: In Situ Assembly of Monolayer Field Effect Transistors
George S. Tulevski,Qian Miao,Masafumi Fukuto,Rebecca Abram,Benjamin Ocko,Ron Pindak,Michael L. Steigerwald,Cherie R. Kagan,Colin Nuckolls +8 more
TL;DR: This study unveils a new tetracene derivative that forms dense, upright monolayers on the surface of aluminum oxide, and delineates a new avenue for research in thin-film organic transistors where the active molecules are linked to the dielectric surface to form a monolayer transistor.
Journal ArticleDOI
Chemical Complementarity in the Contacts for Nanoscale Organic Field-Effect Transistors
TL;DR: This study describes the effect of covalent derivatization of source and drain electrodes with monolayers of organic semiconductors, which form a template on the metal surface and provide better electronic coupling between the electrode and the semiconductor.
Journal ArticleDOI
Patterning of poly(3‐octylthiophene) conducting polymer films by electron beam exposure
TL;DR: In this paper, it was shown that it is possible to directly pattern conducting poly(3-octylthiophene) by electron beam lithography with a resolution down to 50 nm line widths.
Journal ArticleDOI
Device scaling in sub-100 nm pentacene field-effect transistors
TL;DR: In this paper, the effects of scaling on transistor performance were studied, and the results showed that the device characteristics are dominated by the contacts, while decreasing the oxide thickness lowers the device turn-on voltage beyond simple field scaling.
References
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Journal ArticleDOI
Molecular field‐effect transistors using conducting polymer Langmuir–Blodgett films
TL;DR: In this paper, a Langmuir-Blodgett (LB) field effect transistors (FET) was demonstrated using organic semiconductors as the active material.