Journal ArticleDOI
Optimal low-frequency noise criteria used as a reliability test for BJTs and experimental results
TLDR
In this article, the authors considered the application of noise criteria to reliability testing and found that the failure rate of devices which initially exhibit high noise is about 2-3 times higher than those which initially have low noise.About:
This article is published in Microelectronics Reliability.The article was published on 1991-01-01. It has received 20 citations till now. The article focuses on the topics: Noise measurement & Noise.read more
Citations
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Book ChapterDOI
Electrical Noise as a Measure of Quality and Reliability in Electronic Devices
TL;DR: This chapter is devoted to an account of the success that has been obtained in using noise as a nondestructive indicator of reliability.
Journal ArticleDOI
Noise as a diagnostic and prediction tool in reliability physics
TL;DR: A review of the possibility of using noise measurements in analysis and prediction of electron device reliability is given in this paper, where the noise as an informative parameter for device reliability and its advantages and disadvantages are discussed.
Journal ArticleDOI
Quality and 1/f noise of electronic components
TL;DR: The results of investigations of type BF 414 transistors are reported and classification rules of electronic components based on their 1/f noise measurements are presented.
Journal ArticleDOI
1/f, g–r and burst noise used as a screening threshold for reliability estimation of optoelectronic coupled devices
TL;DR: In this paper, the theoretical analysis of noise sources in Optoelectronic Coupled Devices (OCDs) is given and the relation between typical defects and 1/ f, g-r and burst noise is described.
Journal ArticleDOI
The noise analysis and noise reliability indicators of optoelectron coupled devices
Yisong Dai,Jiansheng Xu +1 more
TL;DR: In this paper, the noise performance of optoelectron coupled devices (OCDs) has been analyzed firstly from the rate equations including Langevin noise sources, and then three noise reliability indicators used to estimate quality and reliability of OCDs are given.
References
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Journal ArticleDOI
1/f noise as a reliability estimation for solar cells
TL;DR: In this article, the 1/f noise from a forward biased dark solar cell is a non-destructive reliability estimation and the experimentally observed 1 /f noise is compared with Kleinpenning's one-dimensional calculations for p-n diodes.
Journal ArticleDOI
Presence of mobility-fluctuation 1f noise identified in silicon P+NP transistors
TL;DR: In this article, the authors identify the magnitude and location of mobility-fluctuation 1f noise sources by means of biasing a PNP transistor in a common emitter configuration with first a high and then a low source resistance.
Journal ArticleDOI
Surface state related 1f noise in p-n junctions
TL;DR: In this article, it was shown that the noise power of gate-controlled diodes is proportional to the product of the density of these surface states and the square of the transconductance, defined as the incremental change in forward current with gate bias.
Journal ArticleDOI
Deep-level impurity analysis for p- n junctions of a bipolar transistor from low-frequency g- r noise measurements
TL;DR: Deep-level impurity analysis for p-n junctions of bipolar transistors from g-r noise is less developed than for homogeneous materials as discussed by the authors, and the features of g r noise associated with a p n junction have been elucidated.
Journal ArticleDOI
Excess noise sources due to defects in forward biased junctions
TL;DR: In this paper, the effects of dislocations on flicker noise can be explained by the surface model and the physical sources of burst noise are investigated, and from statistical experiments carried out on several dozens of wafers, it is concluded that crystallographic defects are the main source of burst noises.