scispace - formally typeset
Journal ArticleDOI

Noise as a diagnostic and prediction tool in reliability physics

M.M. Jevtić
- 01 Mar 1995 - 
- Vol. 35, Iss: 3, pp 455-477
Reads0
Chats0
TLDR
A review of the possibility of using noise measurements in analysis and prediction of electron device reliability is given in this paper, where the noise as an informative parameter for device reliability and its advantages and disadvantages are discussed.
About
This article is published in Microelectronics Reliability.The article was published on 1995-03-01. It has received 72 citations till now. The article focuses on the topics: Reliability (statistics) & Noise.

read more

Citations
More filters
Journal ArticleDOI

Low-frequency noise measurements as a characterization tool for degradation phenomena in solid-state devices

TL;DR: An entire section of the paper outlines both the instrumentation required and the reduction of the effects of spurious noise sources and external disturbances in the study of the most frequent causes of failure in integrated circuits and discrete components.
Journal ArticleDOI

Electrical noise as a reliability indicator in electronic devices and components

TL;DR: In this article, a review is given of the developments in the subject over the last few years and a detailed understanding of some noise sources, such as in some semiconductor devices.
Journal ArticleDOI

Noise as a tool for non-destructive testing of single-crystal silicon solar cells

TL;DR: There is a strong correlation between the sample initial-condition noise and the efficiency after 5000 h of combined stressing and it has been established that samples showing low noise feature high-conversion efficiency.
Journal ArticleDOI

Evaluation of conductive-to-resistive layers interaction in thick-film resistors

TL;DR: Low-frequency noise spectroscopy is used to examine the interactions between resistive and conductive films that take place during thick-film resistor (TFR) fabrication and it is found that gold contacts form low-size-effect, stable, low-noise interfaces both with ruthenium dioxide and bismuth rutenate TFRs.
Journal ArticleDOI

Very low-noise, high-accuracy programmable voltage reference

TL;DR: A very low-noise, high-accuracy programmable voltage reference that is intended as an alternative to batteries for the realization of automated low-frequency noise measurement systems.
References
More filters
Journal ArticleDOI

Low-frequency fluctuations in solids: 1/f noise

TL;DR: In this article, the authors deal with selected topics regarding the properties of simple condensed matter systems, especially metals, and find that considerable experimental and conceptual progress has been made, but specific physical processes mostly remain to be identified.
Journal ArticleDOI

Multiplication noise in uniform avalanche diodes

TL;DR: In this article, the spectral density of the noise generated in a uniformly multiplying p-n junction can be derived for any distribution of injected carriers, and the analysis is limited to the white noise spectrum only, and to diodes having large potential drops across the multiplying region of the depletion layer.
Journal ArticleDOI

1/f noise and other slow, nonexponential kinetics in condensed matter.

TL;DR: In this paper, a review of the detailed mechanisms for resistivity with an approximately 1/f 1 spectrum is presented, and several new techniques are explained. And connections with other widespread phenomena, such as highly nonexponential dielectric relaxations, are briefly investigated.
Book

Noise in solid state devices and circuits

TL;DR: In this paper, the authors propose a method to generate 1/f noise noise in particular Amplifier Circuits Mixers by using thermal noise shot and flicker noise, respectively.
Journal ArticleDOI

Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise

TL;DR: In very small electronic devices, the alternate capture and emission of carriers at an individual defect site generates discrete switching in the device resistance, referred to as a random telegraph signal (RTS) as mentioned in this paper.
Related Papers (5)