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Journal ArticleDOI

Optoelectronic switching in a stub transmission line

J. A. Buck, +2 more
- 01 Jan 1980 - 
- Vol. 51, Iss: 1, pp 769-771
TLDR
In this article, optoelectronic switching in a pulseforming microstrip line was demonstrated, which utilizes the energy in a laser pulse for triggering, and pulses 1 ns in width and 1 2 V in amplitude were produced using a 10ns dye laser pulse of 1 kW amplitude.
Abstract
We have demonstrated optoelectronic switching in a pulse‐forming microstrip line, which utilizes the energy in a laser pulse for triggering. Electrical pulses 1 ns in width and of 1–2 V in amplitude were produced using a 10‐ns dye laser pulse of 1‐kW amplitude. The possibilities of further pulse shortening appear very promising.

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Citations
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Journal ArticleDOI

Optoelectronic Microwave Switching via Laser-Induced Plasma Tapers in GaAs Microstrip Sections

TL;DR: In this paper, a new type of high-speed optoelectronic GaAs microstrip switch controlled by a pulse-operated laser diode via substrate-edge excitation is presented, which is capable of switching with subnanosecond precision as well as with optical pule energies in the order of 1 µJ.
Proceedings Article

Ultrafast optoelectronics

TL;DR: In this paper, a review of the high-speed optoelectronics is presented, with attention given to high speed semiconductor lasers, mode-locked semiconductor laser, and high speed photodetectors, concluding that the prospects look good for expanded use of the large bandwidth capability of optical fiber.
Book ChapterDOI

Chapter 3 Picosecond Photoconductivity: High-Speed Measurements of Devices and Materials

TL;DR: In this paper, the concept of subpicosecond optical technology and high-speed photoconducting materials that generates and measures extremely fast electrical pulses are discussed. But the authors focus on the applications of ultrafast optoelectronics for the generation and measurement of ultra fast electrical transients, including microwave, millimeter wave, and far-infrared generation and detection.
Journal ArticleDOI

Generation of microwave pulses by optoelectronically switched resonators

TL;DR: In this paper, the generation of ultrashort pulses or microwave bursts by optoelectronically switched transmission line resonators is investigated numerically and experimentally, using a dc charging source, single ultrafast pulses can be generated, shorter than the laser pulse width and the carrier relaxation time.
Journal ArticleDOI

Surface sensitivity and bias dependence of narrow‐gap metal‐semiconductor‐metal photodetectors

TL;DR: In this article, the electrical field distribution in a Schottky contact metal-semiconductor-metal (MSM) photodetector is one dimensionally approximated and applied to the solution of the illuminated dc characteristics using a bipolar transport model.
References
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Book

Fields and Waves in Communication Electronics

TL;DR: In this article, two-and three-dimensional boundary value problems are studied for two-dimensional waveguides with Cylindrical Conducting Boundaries (CCLB).
Journal ArticleDOI

Picosecond optoelectronic switching and gating in silicon

TL;DR: In this paper, the authors measured the switching speed of two transmission gates in tandem, each having an aperture time of 15 psec, by correlating the response of two transceivers in tandem.
Journal ArticleDOI

Picosecond optoelectronic switching in GaAs

Chi H. Lee
TL;DR: In this article, the effect of the Ridley-Watkins-Hilsum mechanism on the performance of a GaAs slab in a charged line pulser was discussed. But the effect was not discussed.
Journal ArticleDOI

Microwave switching by picosecond photoconductivity

TL;DR: In this paper, the authors proposed a short-cycle microwave and millimeter-wave switching scheme using a few microjoules of optical energy, which was demonstrated with switching experiments at 1 GHz and 10 GHz, and the results with reference to the physical properties of the high-density plasma responsible for the switching.