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Journal ArticleDOI

Orientation selection in thin platinum films on (001) MgO

Paul C. McIntyre, +2 more
- 15 Jun 1995 - 
- Vol. 77, Iss: 12, pp 6201-6204
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TLDR
In this paper, an ion beam channeling and x-ray diffraction was used for orientation selection in Pt films of ∼20 nm thickness on (001) MgO substrates by e−beam evaporation.
Abstract
Orientation selection in platinum films of ∼20 nm thickness deposited onto (001) MgO substrates by e‐beam evaporation was investigated through ion beam channeling and x‐ray diffraction. A mixture of crystallites having (111) and (001) orientation was observed in Pt films deposited over a range of substrate temperatures from 25 to 700 °C, with the (111) orientation dominant at low temperatures. The (111) orientation was present in these evaporated films at significantly higher substrate temperatures than reported for Pt films deposited by sputtering or pulsed laser deposition. Both orientations had strongly preferred in‐plane orientations: [110] Pt//[110] MgO for the (001)‐oriented crystallites and [110]Pt//[110] MgO for the (111). The orientation selection process was rationalized based on the expected relative interfacial energies for these two orientations.

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Citations
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Journal ArticleDOI

Microstructure of fept/pt magneticthin films with high perpendicular coercivity

TL;DR: In this article, a high density of planar defects such as twin and antiphase boundary defects are present in the FePt films, while that of the antiphases boundary does not show noticeable changes.
Journal ArticleDOI

Thin Pt films on the polar SrTiO3(111) surface: an experimental and theoretical study

TL;DR: In this paper, the growth of thin Pt films on the polar SrTiO 3 (1.1) surface using both experimental and theoretical methods was examined. And the authors found that the structure and growth modes of the first few monolayers are coupled strongly to the substrate.
Journal ArticleDOI

Change of growth orientation in Pt films epitaxially grown on MgO(001) substrates by sputtering

TL;DR: In this paper, a drastic change of the growth orientation in epitaxial Pt films grown by sputtering on MgO(001) was observed and the degree of supersaturation in growth conditions was proposed as a key driver of the orientation change.
Journal ArticleDOI

Crystal orientation and surface morphology of face-centered-cubic metal thin films deposited upon single-crystal ceramic substrates using pulsed laser deposition

TL;DR: In this article, cube-on-cube epitaxial growth is promoted by low-energy interfaces, low surface energy anisotropies, and slow surface diffusion coefficients on (100)-oriented ceramic substrates (SrTiO3, LaAlO3 and MgO).
Journal ArticleDOI

Epitaxial growth of Pt and oxide multilayers on MgO by laser ablation

TL;DR: In this article, the epitaxial growth of Pt films on MgO substrates by laser ablation was studied, and multilayered structures with LiCoO2 or LiMn2O4 layer were epitaxially grown.
References
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Journal ArticleDOI

Monte carlo channeling calculations.

TL;DR: In this article, a Monte Carlo computer program for following the trajectories of high-energy ions in a lattice has been used to study depth dependence, half-angles, and minimum yields in channeling.
Journal ArticleDOI

Epitaxial Growth of Metals on Rocksalt Faces Cleaved in Vacuum. II. Orientation and Structure of Gold Particles Formed in Ultrahigh Vacuum

TL;DR: A multiply twinned particle model is proposed by the present author, and the appearance of the 111 spots and the dark field image contrasts can satisfactorily be explained by this model.
Journal ArticleDOI

Dislocation Nodes in Face-Centred Cubic Lattices

TL;DR: In this paper, the effect of the node structure on the behaviour of the source is considered, and it is shown that such a source may progressively change its character during the process of dislocation production.
Journal ArticleDOI

Ion-beam-induced epitaxial vapor-phase growth: A molecular-dynamics study

TL;DR: In a two-dimensional molecular-dynamics simulation where inert-gas ions strike a growing film of Lennard-Jones particles, it is demonstrated that ion bombardment during growth causes the filling of voids quenched in during vapor condensation and induces homoepitaxial growth.
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