Proceedings ArticleDOI
Performance Efficiency Of InSb Charge Injection Devices (CID)
M. D. Gibbons,J.M. Swab,W. E. Davern,R. W. Aldrich +3 more
- Vol. 0203, pp 158-165
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TLDR
In this article, the performance of Indium Antimonide charge injection devices (CID) arrays has been analyzed and compared to experimental results. But the main advantage of the CSM is that it overcomes charge transfer problems that might be present in practical arrays, and is believed to be radiation damage resistant.Abstract:
This paper describes the factors governing the Performance Efficiency (PE) of Indium Antimonide Charge Injection Devices (CID) arrays. Factors influencing PE in both line and area arrays are considered and compared to experimental results. An important factor re-lates to the signal charge loss of a dual gate array operating in the charge sharing mode (CSM). The chief advantages of the CSM are that it overcomes charge transfer problems that might be present in practical arrays, and it is believed to be radiation damage resistant. The chief limitation is that only the charge residing under the sensing gate of the dual gate site is read out. This loss can be lessened by designing the sensing gate to be a large fraction of the total storage area. Performance data of lx32, lx64 line arrays, 24x16 and 32x32 dual gate area arrays are presented. Line arrays FE up to 56 percent, responsivity variation below 10 percent, and D* of about 3x1011 cm HZ½/watt have been measured.© (1979) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.read more
Citations
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Journal ArticleDOI
Characteristics and readout of an InSb CID two-dimensional scanning TDI array
TL;DR: In this article, a 16 × 64 InSb CID 2-D array using a concentric gate structure and planar processing designed for scanning TDI applications is described and an in-depth analysis of the physical mechanisms of the charge-injection device and a simplified dual-gate CID readout modeling based on a piecewise linear approximation is discussed.
Proceedings ArticleDOI
Status Of CID InSb Detector Technology
M . D. Gibbons,S. C. Wang +1 more
TL;DR: In this paper, Indium Antimonide Charge Injection Device (CID) technology is presented for IR focal planes with large numbers of detectors, where single capacitors are used to form line array sites while two coupled capacitors form sites of area arrays.
Journal ArticleDOI
Output properties of charge-injection devices: Part I—Read on injection
D.L. Weinberg,A.F. Milton +1 more
TL;DR: In this article, the Kirchhoff voltage equation for surface potential was used to obtain the readout of charge-injection device (CID) arrays, used for optical detection.
Journal ArticleDOI
Ideal mode operation of an InSb charge injection device
Ching-Yeu Wei,H.H. Woodbury +1 more
TL;DR: In this article, the authors describe the design and fabrication of an InSb CID array, which for the first time, successfully demonstrates the ideal mode operation, and they describe the fabrication and implementation of an ideal mode IC array.
Proceedings ArticleDOI
Experiments in infrared multispectral mapping of earth resources
J. B. Wellman,A. F. H. Goetz +1 more
TL;DR: In this paper, a design concept for an operational sensor which employs area arrays for registered multispectral image data acquisition is under study, which utilizes onboard spectral band selection, radiometric correction, and data compression to satisfy the demanding requirements of the user community.