Journal ArticleDOI
Photoluminescence of infrared‐sensing materials using an FTIR spectrometer
TLDR
In this paper, two techniques designed to facilitate the extraction of spontaneous radiative spectrum are discussed and compared, and two techniques for the identification of the photoluminescence peak are compared.Abstract:
Semiconductor materials commonly used in mid‐ and long‐wavelength infrared sensing applications generally have a low radiative efficiency, and the ambient blackbody radiation spectrum often dominates and interferes with the identification of the photoluminescence peak. Two techniques designed to facilitate the extraction of the spontaneous radiative spectrum are discussed and compared.read more
Citations
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Journal ArticleDOI
Modulated photoluminescence spectroscopy with a step-scan Fourier transform infrared spectrometer
TL;DR: In this article, a modulated photoluminescence (PL) technique based on step-scan (SS)-FTIR spectrometer is developed for semiconductors, and applications of the technique are given as examples in the PL study of mid-infrared HgCdTe thin films and nearinfrared GaInP∕AlGaInP multiple quantum wells, respectively.
Journal ArticleDOI
Photoreflectance spectroscopy with a step-scan Fourier-transform infrared spectrometer: technique and applications.
TL;DR: A new technique of realizing photoreflectance (PR) spectroscopy with a step-scan Fourier-transform infrared spectrometer and the results reveal that the PR related signal is enhanced by a factor of at least 100 relative to those of the conventional PR techniques.
Journal ArticleDOI
Room-temperature InAsSb strained-layer superlattice light-emitting diodes at λ=4.2 μm with AlSb barriers for improved carrier confinement
TL;DR: In this paper, the InAs/InAs1−xSbx strained-layer superlattice light-emitting diodes (x∼8%) were reported that emit at λ∼4.2μm with an internal efficiency of 2.8%.
Journal ArticleDOI
Backside-illuminated infrared photoluminescence and photoreflectance: Probe of vertical nonuniformity of HgCdTe on GaAs
TL;DR: In this article, backside illuminated infrared photoluminescence (PL) and photoreflectance (PR) measurements are carried out on an arsenic-doped Hg1−xCdxTe layer molecular-beam epitaxially grown on GaAs substrate, and the alloy composition and impurity states of the HgCdTe near the substrate are evaluated.
Journal ArticleDOI
Infrared photoluminescence of arsenic-doped HgCdTe in a wide temperature range of up to 290 K
TL;DR: In this article, infrared modulated photoluminescence (PL) spectra are recorded in the temperature range of 11.5-290 K for both as-grown and p-type annealed arsenic-doped narrow-gap HgCdTe epilayers prepared by molecular beam epitaxy.
References
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Journal ArticleDOI
Recombination Emission in InSb
Aram Mooradian,H. Y. Fan +1 more
TL;DR: In this article, the emission of phonon-assisted transitions is about 150 times weaker than that of direct transitions; this ratio is consistent with the strength of polar-mode coupling.
Journal ArticleDOI
Luminescence studies of HgCdTe alloys
A. T. Hunter,T. C. McGill +1 more
TL;DR: In this article, the authors reported the observation in Hg(1-x)Cd(x)Te of band-to-band, bandtoacceptor, and donor-acceptor luminescence for material of x = 0.32 and 0.48 materials, respectively.
Journal ArticleDOI
Identification of defect centers in Hg1−xCdxTe using their energy level composition dependence
TL;DR: In this article, the authors extended the Kobayashi, Sankey, and Dow theory of deep levels in Hg1−xCdxTe to include (vacancy, impurity) nearest neighbor pairs.