Journal ArticleDOI
Physical and electrical properties of laser‐annealed ion‐implanted silicon
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In this article, the use of a laser as a tool for annealing of ion implantation damage is described, and electrical measurements show that activity comparable to that of a 1000 °C 30min anneal can be obtained.Abstract:
The use of a laser as a tool for annealing of ion‐implantation damage is described. The principal results obtained are as follows: (1) electrical measurements show that activity comparable to that of a 1000 °C 30‐min anneal can be obtained; (2) TEM measurements show that complete recrystallization of the damaged layer occurs during the laser anneal; (3) impurity profiles obtained from SIMS measurments show that the dopant atoms remain in the LSS profile during annealing. Simple diodes were fabricated to examine the feasibility of the method for device fabrication.read more
Citations
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Journal ArticleDOI
Temperature distributions produced in semiconductors by a scanning elliptical or circular cw laser beam
TL;DR: In this article, the temperature profiles induced by a cw laser beam in a semiconductor are calculated for an elliptical scanning beam and covers a wide range of experimental conditions, and the limiting case of a circular beam is also studied.
Journal ArticleDOI
Temperature rise induced by a laser beam II. The nonlinear case
TL;DR: In this paper, the steady state solution of the nonlinear heat-conduction equation when the thermal conductivity is strongly temperature dependent is expressed (for arbitrary geometry and heat source) in terms of the corresponding solution for the linear heatconduction case.
Journal ArticleDOI
cw laser anneal of polycrystalline silicon: Crystalline structure, electrical properties
TL;DR: In this article, a 3.4mm-thick polycrystalline silicon was implanted with B to a dose of 5×1014/cm2 and irradiated in a cw laser scanning apparatus.
Patent
Method of obtaining a thin film of semiconductor material
TL;DR: In this article, a method of obtaining a thin film from a substrate made of semiconductor material, the thin film including at least one element on one face of the substrate made from a material different from the semiconductor materials, and conferring to the thin-film a heterogeneous structure is described.
Journal ArticleDOI
Theoretical analysis of thermal and mass transport in ion‐implanted laser‐annealed silicon
TL;DR: In this paper, the redistribution of a dopant file after pulsed-laser annealing is dependent on the time the dopant region remains molten and on the value of the mass-diffusion coefficient for the particular dopant.
References
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Journal ArticleDOI
A laser‐scanning apparatus for annealing of ion‐implantation damage in semiconductors
A. Gat,J. F. Gibbons +1 more
TL;DR: In this article, the feasibility of annealing ion implantation damage by means of a continuous high-power laser was demonstrated and an apparatus for the scanning of a semiconductor sample was described.
Journal ArticleDOI
Evaluation of a Cesium Primary Ion Source on an Ion Microprobe Mass Spectrometer
TL;DR: In this paper, a commercially available Cs^+ ion source was modified for use as the primary Ion source on an Ion microprobe mass spectrometer, achieving up to 1000 h operation on a single charge of cesium.
Journal ArticleDOI
Contact metallurgy for shallow junction Si devices
TL;DR: In this article, a contact metallization for shallow junction Si devices is described, where a layer of Pd2Si is added to the contact window between the Al and the Si to reduce the Si diffusion from the contact region into the Al.
Journal ArticleDOI
Use of argon laser radiation in restoration of single-crystal state of ion-implantation-amorphized silicon surface
TL;DR: In this paper, high power (up to 500 W) radiation of a cw argon laser was used to restore the single-crystal state of a silicon surface made amorphous by ion implantation.