Physics of
Semiconductor Devices
Third Edition
S. M. Sze
National Chiao Tung University
Hsinchu, Taiwan
and
Stanford University
Stanford, California
Kwok K. Ng
Semiconductor Research Corporation
Durham, North Carolina
WILEY-
INTERSCIENCE
A JOHN WILEY & SONS, INC., PUBLICATION
Contents
Introduction
1
Part I Semiconductor Physics
Chapter 1 Physics and Properties of Semiconductors—A Review
7
1.1 Introduction, 7
1.2 Crystal Structure, 8
1.3 Energy Bands and Energy Gap, 12
1.4 Carrier Concentration at Thermal Equilibrium, 16
1.5 Carrier-Transport Phenomena, 28
1.6 Phonon, Optical, and Thermal Properties, 50
1.7 Heterojunctions and Nanostructures, 56
1.8 Basic Equations and Examples, 62
Part II
Device
Building Blocks
Chapter 2
p-n
Junctions
79
2.1 Introduction, 79
2.2 Depletion Region, 80
2.3 Current-Voltage Characteristics, 90
2.4 Junction Breakdown, 102
2.5 Transient Behavior and Noise, 114
2.6 Terminal Functions, 118
2.7 Heterojunctions, 124
Chapter 3 Metal-Semiconductor Contacts
134
3.1 Introduction, 134
3.2 Formation of Barrier, 135
3.3 Current Transport Processes, 153
3.4 Measurement of Barrier Height, 170
3.5 Device Structures, 181
3.6 Ohmic Contact, 187
vü
viii CONTENTS
Chapter 4 Metal-Insulator-Semiconductor Capacitors
197
4.1 Introduction, 197
4.2 Ideal MIS Capacitor, 198
4.3 Silicon MOS Capacitor, 213
Part III Transistors
Chapter 5 Bipolar Transistors
243
5.1 Introduction, 243
5.2 Static Characteristics, 244
5.3 Microwave Characteristics, 262
5.4 Related Device Structures, 275
5.5 Heterojunction Bipolar Transistor, 282
Chapter 6 MOSFETs
293
6.1 Introduction, 293
6.2 Basic Device Characteristics, 297
6.3 Nonuniform Doping and Buried-Channel Device, 320
6.4 Device Scaling and Short-Channel Effects, 328
6.5 MOSFET Structures, 339
6.6 Circuit Applications, 347
6.7 Nonvolatile Memory Devices, 350
6.8 Single-Electron Transistor, 360
Chapter 7 JFETs, MESFETs, and MODFETs
374
7.1 Introduction, 374
7.2 JFET and MESFET, 375
7.3 MODFET, 401
Part IV Negative-Resistance and Power Devices
Chapter 8 Tunnel Devices
417
8.1 Introduction, 417
8.2 Tunnel Diode, 418
8.3 Related Tunnel Devices, 435
8.4 Resonant-Tunneling Diode, 454
Chapter 9 IMPATT Diodes
466
9.1 Introduction, 466
CONTENTS ix
9.2 Static Characteristics, 467
9.3 Dynamic Characteristics, 474
9.4 Power and Efficiency, 482
9.5 Noise Behavior, 489
9.6 Device Design and Performance, 493
9.7 BARITT Diode, 497
9.8 TUNNETT Diode, 504
Chapter 10 Transferred-Electron and Real-Space-Transfer Devices 510
10.1 Introduction, 510
10.2 Transferred-Electron Device, 511
10.3 Real-Space-Transfer Devices, 536
Chapter 11 Thyristors and Power Devices
548
11.1 Introduction, 548
11.2 Thyristor Characteristics, 549
11.3 Thyristor Variations, 574
11.4 Other Power Devices, 582
Part V Photonic Devices and Sensors
Chapter 12 LEDs and Lasers
601
12.1 Introduction, 601
12.2 Radiative Transitions, 603
12.3 Light-Emitting Diode (LED), 608
12.4 Laser Physics, 621
12.5 Laser Operating Characteristics, 630
12.6 Specialty Lasers, 651
Chapter 13 Photodetectors and Solar Cells
663
13.1 Introduction, 663
13.2 Photoconductor, 667
13.3 Photodiodes, 671
13.4 Avalanche Photodiode, 683
13.5 Phototransistor, 694
13.6 Charge-Coupled Device (CCD), 697
13.7 Metal-Semiconductor-Metal Photodetector, 712
13.8 Quantum-Well Infrared Photodetector, 716
13.9 Solar Cell, 719
x
CONTENTS
Chapter 14 Sensors
743
14.1 Introduction, 743
14.2 Thermal Sensors, 744
14.3 Mechanical Sensors, 750
14.4 Magnetic Sensors, 758
14.5 Chemical Sensors, 765
Appendixes
773
A.
List of Symbols, 775
B.
International System of Units, 785
C.
Unit Prefixes, 786
D.
Greek Alphabet, 787
E.
Physical Constants, 788
F.
Properties of Important Semiconductors, 789
G Properties of Si and GaAs, 790
H. Properties of Si0
2
and Si
3
N
4
, 791
Index
793