Plasma‐induced damage of GaAs pn‐junction diodes using electron cyclotron resonance generated Cl2/Ar, BCl3/Ar, Cl2/BCl3/Ar, and SiCl4/Ar plasmas

TLDR: In this article, the etch-induced damage of electron cyclotron resonance (ECR) generated plasmas on the electrical performance of mesa-isolated GaAs pn-junction diodes was investigated.

Abstract: Plasma‐induced etch damage often degrades the electrical and optical performance of III–V high‐density integrated circuits and photonic devices. We have investigated the etch‐induced damage of electron cyclotron resonance (ECR) generated plasmas on the electrical performance of mesa‐isolated GaAs pn‐junction diodes. Cl2/Ar, BCl3/Ar, Cl2/BCl3/Ar, and SiCl4/Ar ECR plasmas at ion energies ranging from 10 to 200 eV were studied. Diodes fabricated under low dc‐bias (≤100 V) etch conditions yielded low reverse‐bias currents which were comparable to wet‐chemical‐etched devices. As the dc bias was increased, the diodes showed significantly higher reverse‐bias currents indicating plasma‐induced sidewall damage of the pn‐junction. Variations in diode reverse‐bias leakage currents are reported as a function of plasma parameters and chemistries.