Journal ArticleDOI
Plasma oxidation of aluminum film on GaAs—A study by Auger spectroscopy and transmission electron microscopy
Reads0
Chats0
TLDR
In this article, an amorphous GaAs-oxide film with a Ga/As concentration ratio of unity all the way to the GaAs substrate was achieved by using the Aloxide film as a preferential filter for the migration of Ga and As.Abstract:
Plasma oxidation of thin polycrystalline aluminum films (∼100 A) on GaAs has shown that oxidation of aluminum proceeds by an initial rapid grain‐boundary oxidation of the aluminum followed by a slower oxidation towards the centers of the individual grains. Continued oxidation results in the growth of Ga‐As‐ oxide layers on both sides of the Al‐oxide film indicating that the oxidation of GaAs proceeds by an electric‐field‐assisted in‐migration of oxygen through the Al‐oxide layer toward the interface and the out‐migration of Ga and As toward the surface. This oxidation process can be used to form an amorphous film of Al‐oxide on GaAs. By using the Al‐oxide film as a preferential filter for the migration of Ga and As, an amorphous Ga‐As‐oxide film with a Ga/As concentration ratio of unity all the way to the GaAs substrate can also be achieved.read more
Citations
More filters
Journal ArticleDOI
Detection of excess crystalline As and Sb in III‐V oxide interfaces by Raman scattering
TL;DR: In this article, the anomalous peaks from oxidized GaAs and InAs were determined to be from excess As in the interface between the oxides and underlying semiconductors, and from the frequencies, line shapes, and polarization selection rules, the excess As and Sb are in the crystalline semimetal phase, as distinct from the amorphous phase.
Journal ArticleDOI
A NEW RESONANT ELLIPSOMETRIC TECHNIQUE FOR CHARACTERIZING THE INTERFACE BETWEEN GaAs AND ITS PLASMA-GROWN OXIDE.
TL;DR: In this article, a standing-wave condition is applied to a thin transparent dielectric layer on an absorbing substrate, which efficiently couples the S wave to the substrate, simulating a cavity resonance in the dielectrics and maximizing the complex reflectance ratio.
Journal ArticleDOI
Transport number measurements during plasma anodization of Si, GaAs, and ZrSi2
TL;DR: In this article, the transport number of cations t+ in oxides grown by anodization in oxygen plasma has been investigated using Xe atom markers and Rutherford backscattering techniques were used to determine the change in Xe marker position related to the change of oxide thickness.
Journal ArticleDOI
Oxidation of GaAs in an oxygen multipole plasma
S. Gourrier,A. Mircea,M. Bacal +2 more
TL;DR: In this article, the electrical properties of metal-oxide-semiconductor structures are controlled by interface states in the whole band gap: in the upper half (near the middle of the gap) densities in the range 1013 cm-2 eV-1 of rather slow interface states (which are unable to follow a 1 MHz signal at room temperature) and in the lower half “faster” interface states are detected from C(V) measurements on n-type and p-type samples.
References
More filters
Book
Characterization of solid surfaces
TL;DR: In the last decade or so, a number of developments have shown that, for many purposes, the distribution of defects within a material can confer important new properties on the material as discussed by the authors.
Journal ArticleDOI
General formalism for quantitative Auger analysis
TL;DR: In this paper, the basic formalisms for treatment of the homogeneous surface and the layered structure are presented; their use and typical limitations are demonstrated by examining some applications, such as surface chemical composition analysis.
Journal ArticleDOI
Transmission electron microscopy of cross sections of large scale integrated circuits
Tan-Tan Sheng,C.C. Chang +1 more
TL;DR: In this paper, a cross-sectional view of a CMOS RAM with poly-Si gates and tungsten second metal was obtained by using transmission electron microscopy (TEM).
Journal ArticleDOI
Plasma oxidation of GaAs
Robert P. H. Chang,A. K. Sinha +1 more
TL;DR: In this paper, a new process for plasma oxidation of GaAs has been developed, which has amorphous structure, with composition and thickness uniformity better than ±10% over areas ≲1 cm2.
Journal ArticleDOI
Multipurpose plasma reactor for materials research and processing
TL;DR: The operation of the Bell Laboratories large capacity, multipurpose plasma reactor for materials research and processing is discussed in this article, where the design of the reactor is such that all the plasma parameters can be independently controlled.