Patent
Plasma processor and method for IC fabrication
TLDR
In this article, a floating wafer processing method was proposed to provide a higher processing rate and better etching uniformity, where the radicals react with the underside of a turned wafer placed on a base plate in the reacting region, because the gas is blown against the surface of the wafer by the pressure differential.Abstract:
A plasma processor, for dry etching during a fabricating process for an integrated circuit semiconductor device, including a plasma generating region formed in a waveguide into which microwave power is transmitted. An etchant gas is introduced into the plasma generating region and a plasma is generated. The plasma generating region and a reacting region are kept at a specific gas pressure differential by an evacuating device. The radicals (active etching species) react with the underside of a turned wafer placed on a base plate in the reacting region because the gas is blown against the underside of the wafer by the pressure differential. In particular, the wafer is etched by etchant gases floating the wafer by blowing the gases out of holes in the base plate. The floating wafer processing method provides a higher processing rate and better etching uniformity.read more
Citations
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Patent
Substrate Processing Apparatus
TL;DR: In this article, a bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the booster pump to prevent the exhaust gas from diffusing back to the inside of a process chamber.
Patent
Gas-based substrate protection during processing
Everhardus Van De Ven P,Eliot K. Broadbent,Jeffrey C. Benzing,Barry L. Chin,Christopher W. Burkhart +4 more
TL;DR: In this article, the backside gas is heated in and about the bottom of the platen, and introduced through a circular groove in the peripheral region outside of the outermost vacuum groove of the vacuum chuck.
Patent
Showerhead assembly and ALD methods
Sven Lindfors,Pekka J. Soininen +1 more
TL;DR: In this article, an atomic layer deposition (ALD) system is described. Butler et al. present an apparatus for depositing thin films onto a substrate, which includes a gas exchange plate that is positioned within a reaction chamber having a platform.
Patent
Deposition methods and apparatus for improved delivery of metastable species
TL;DR: In this article, an atomic layer deposition (ALD) method was proposed for containment of a metastable specie connected to a deposition chamber, which includes a catalytic catalyst within the reservoir.
Patent
Toroidal electron cyclotron resonance reactor
TL;DR: In this article, a toroidal ECR reactor is described in which a poloidal magnetic field is established in a plasma generating chamber, and a specimen to be processed is disposed on an electrode in a specimen chamber.
References
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Patent
Apparatus and method for handling and treating articles
TL;DR: In this paper, an improved apparatus and method for transporting articles and for centering articles in sequence by means of fluid-bearing devices is presented. But their utility is not restricted to such use.
Patent
Gas etching method and apparatus
TL;DR: A gas etching apparatus comprising an etching gas-producing chamber, means for introducing into the chamber a mixture of a gas containing fluorine atoms and a gas contained oxygen atoms, and means for activating the gas mixture received in the producing chamber is described in this article.
Patent
Method for floating transport of substrates
TL;DR: Improved apparatus for inter-cushion processing and transport of substrates towards and from process modules are described in this paper. But the authors do not specify the main processing of said substrates.
Patent
Wafer support system
TL;DR: In this article, an etchant gas is introduced into the vacuum chamber, and a second gas at a volume flow rate much lower than the volume flow rates of the etchant is directed to orifices formed in a wafer-receiving surface of an electrode to define the gas cushion.
Patent
Process and gas mixture for etching aluminum
TL;DR: In this article, a stable uniform plasma is generated at relatively high pressure and power levels, and this provides substantially faster removal of aluminum than has heretofore been possible in planar reactors.