Journal ArticleDOI
Point exposure distribution measurements for proximity correction in electron beam lithography on a sub‐100 nm scale
S. Rishton,Dieter P. Kern +1 more
TLDR
In this article, the authors demonstrate a technique, using a very high contrast resist, whereby the normalized point exposure distribution can be measured experimentally, both on solid substrates which cause backscattering, and on thin substrates where backscatter is negligible.Abstract:
The exposure distribution function in electron beam lithography, which is needed to perform proximity correction, is usually simulated by Monte Carlo techniques, assuming a Gaussian distribution of the primary beam. The resulting backscattered part of the exposure distribution is usually also fitted to a Gaussian term. In this paper we demonstrate a technique, using a very high contrast resist, whereby the normalized point exposure distribution can be measured experimentally, both on solid substrates which cause backscattering, and on thin substrates where backscattering is negligible. The data sets so obtained can be applied directly to proximity correction and represent the practical conditions met in pattern writing. Results are presented of the distributions obtained on silicon, gallium arsenide, and thin silicon nitride substrates at different beam energies. Significant deviations from the commonly assumed double Gaussian distributions are apparent. On GaAs substrates the backscatter distribution cannot adequately be described by a Gaussian function. Even on silicon a significant amount of exposure is found in the transition region between the two Gaussian terms. This deviation, which can be due to non‐Gaussian tails in the primary beam and to forward scattering in the resist, must be taken into account for accurate proximity correction in most submicron lithography, and certainly on the sub‐100 nm scale.read more
Citations
More filters
Dissertation
Nanostrukturierte Ladungsträgergase für nicht-klassische Bauelementekonzepte
TL;DR: In this article, the authors present an approach for the design and realisation of AlGaN/GaN-based nanostructures, which show outstanding opportunities of use such asrectifiers, side-gate transistors, logic gatters and selective switches due to their nonclassic effects.
Proceedings ArticleDOI
Full-chip high resolution electron-beam lithography proximity effect correction modeling
Artak Isoyan,Lawrence S. Melvin +1 more
TL;DR: This study shows a complete solution for EBL modeling and Electron Beam Proximity Correction (EBPC) correction of full-chip layouts based on aerial image formation through modeling of the e-beam point spread function to assimilate electron beam image formation.
Journal ArticleDOI
Requirement for Suppression of Line Width Roughness in Fabrication of Line-and-Space Patterns with 7 nm Quarter-Pitch Using Electron Beam Lithography with Chemically Amplified Resist Process
TL;DR: In this paper, the authors investigated the feasibility of the fabrication of line-and-space patterns with 7 nm quarter-pitch (7 nm space width and 28 nm pitch) with a chemically amplified resist process, assuming electron beam (EB) lithography.
Pattern Shape Modulation by Scanning Methods in E-Beam Lithography
TL;DR: In this article, four types of scanning methods are implemented and their characteristics are investigated and it is proved that abrupt change in the pattern generation limits to obtaining a fine and small pattern.
Proceedings ArticleDOI
Metrology variability and its impact in process modeling
Thiago Figueiro,Mohamed Saib,Kang-Hoon Choi,Christoph Hohle,M J Thornton,Cyril Vannufel,Jean-Hervé Tortai,Patrick Schiavone +7 more
TL;DR: In this article, metrology variability was evaluated by measuring the same wafer using two different CD-SEM tools and the information coming from these analyses was used as reference to a variation induced calibration test using synthetic data.
Related Papers (5)
Energy deposition functions in electron resist films on substrates
Mihir Parikh,David F. Kyser +1 more