Journal ArticleDOI
Point exposure distribution measurements for proximity correction in electron beam lithography on a sub‐100 nm scale
S. Rishton,Dieter P. Kern +1 more
TLDR
In this article, the authors demonstrate a technique, using a very high contrast resist, whereby the normalized point exposure distribution can be measured experimentally, both on solid substrates which cause backscattering, and on thin substrates where backscatter is negligible.Abstract:
The exposure distribution function in electron beam lithography, which is needed to perform proximity correction, is usually simulated by Monte Carlo techniques, assuming a Gaussian distribution of the primary beam. The resulting backscattered part of the exposure distribution is usually also fitted to a Gaussian term. In this paper we demonstrate a technique, using a very high contrast resist, whereby the normalized point exposure distribution can be measured experimentally, both on solid substrates which cause backscattering, and on thin substrates where backscattering is negligible. The data sets so obtained can be applied directly to proximity correction and represent the practical conditions met in pattern writing. Results are presented of the distributions obtained on silicon, gallium arsenide, and thin silicon nitride substrates at different beam energies. Significant deviations from the commonly assumed double Gaussian distributions are apparent. On GaAs substrates the backscatter distribution cannot adequately be described by a Gaussian function. Even on silicon a significant amount of exposure is found in the transition region between the two Gaussian terms. This deviation, which can be due to non‐Gaussian tails in the primary beam and to forward scattering in the resist, must be taken into account for accurate proximity correction in most submicron lithography, and certainly on the sub‐100 nm scale.read more
Citations
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Journal ArticleDOI
Patterning of octadecylsiloxane self-assembled monolayers on Si(100) using Ar(3P0,2) atoms
S. B. Hill,C. A. Haich,F. B. Dunning,G. K. Walters,Jabez J. McClelland,Robert Celotta,Harold G. Craighead,J. Han,David M. Tanenbaum +8 more
TL;DR: In this paper, the use of metastable Ar(3P0,2) atoms and a physical mask to pattern octadecylsiloxane self-assembled monolayers grown directly on silicon surfaces was reported.
Book ChapterDOI
Helium Ion Lithography
TL;DR: In this paper, Scanning Helium Ion Beam Lithography (SHIBL) with a sub-nanometer beam diameter is a promising alternative fabrication technique for high-resolution nanostructures at high pattern densities.
Journal ArticleDOI
Complex nanostructures in PMMA made by a single process step using e-beam lithography
TL;DR: In this article, a single step fabrication of autocentered nanopillars with surrounding circular rim is presented, which is created by the energy density distribution of incident and backscattered electrons and reflects the dual behavior of PMMA as positive and negative ebeam resist.
Journal ArticleDOI
Electron Scattering in Microstructure Processes (
TL;DR: In this article, the Monte Carlo method is used to calculate the trajectory of an electron through a solid, assuming it is scattered through randomly determined angles, on the basis of the equations used to approximate the physical processes.
Journal ArticleDOI
Highly accurate proximity effect correction for 100 kV electron projection lithography
TL;DR: In this paper, the authors provided an adequate approximation to an actual exposure intensity distribution (EID) for 100 kV electron projection lithography (EPL) by using a new function employing 2-Gaussian plus exponential model.
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