Journal ArticleDOI
Polycrystalline silicon thin-film transistors with two-step annealing process
TLDR
In this paper, a two-step annealing process on glass substrates was used to construct thin-film transistors (TFTs) from poly-Si crystallized polysilicon.Abstract:
Thin-film transistors (TFTs) were fabricated from poly-Si crystallized by a two-step annealing process on glass substrates. The combination of low-temperature furnace annealing and high-temperature rapid thermal annealing leads to a significant improvement in the material quality. The TFTs obtained with this two-step annealing material exhibit better measured characteristics than those obtained by using conventional furnace annealing. >read more
Citations
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Patent
Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Patent
Semiconductor display device
Shunpei Yamazaki,Jun Koyama +1 more
TL;DR: In this article, the luminance of the EL elements of each in the display pixels is controlled in accordance with the amount of electric current flowing in each of the diodes, which is a function of the environment.
Patent
Method of Manufacturing a Semiconductor Device
Masaaki Hiroki,Shunpei Yamazaki +1 more
TL;DR: In this article, the amorphous silicon film is formed using silane gas diluted with hydrogen and crystallization is attained in the crystallization process even with the continuous formation of the base film through the polysilicon film in the single film forming chamber.
Patent
Semiconductor device having improved crystal orientation
TL;DR: In this paper, the vertical growth and the lateral growth have a difference in the degree of crystal orientation and the off-current and its variation can be reduced in the latter regions.
Patent
Method of preparing a semiconductor having a controlled crystal orientation
Hongyong Zhang,Toru Takayama,Yasuhiko Takemura,Akiharu Miyanaga,Hisashi Ohtani,Junichi Takeyama +5 more
TL;DR: In this paper, a semiconductor device with needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis is described. And a method for preparing the semiconductor devices comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphized silicon film containing the catalytic elements at a low temperature to crystallize the silicon film.
References
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Journal ArticleDOI
Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon films
TL;DR: In this paper, the average grain size of the crystallized amorphous silicon films depends on the annealing temperature and the deposition conditions, and the final grain size is also influenced by the annaling temperature with the largest grain size obtained at low-annealing temperatures.
Journal ArticleDOI
Crystallized Si films by low‐temperature rapid thermal annealing of amorphous silicon
TL;DR: In this article, the authors used low-temperature rapid thermal annealing to crystallize both undoped and doped amorphous silicon (a•Si) films deposited at low temperatures.
Journal ArticleDOI
High performance low-temperature poly-Si n-channel TFTs for LCD
Akio Mimura,Nobutake Konishi,Kikuo Ono,J.-I. Ohwada,Yoshikazu Hosokawa,Y.A. Ono,T. Suzuki,Kenji Miyata,Hideaki Kawakami +8 more
TL;DR: In this paper, the conditions for low-pressure chemical vapor deposition of the active layer poly-Si were optimized to achieve low threshold voltage (V/sub TH/) and high field effect mobility ( mu /sub FE/).
Journal ArticleDOI
Poly-Si Thin Film Transistors Fabricated with Rapid Thermal Annealed Silicon Films
TL;DR: In this article, a new process for realization of polysilicon thin-film transitors (TFT) on glass substrates is described, based on crystallization by rapid thermal annealing of amorphous silicon films deposited by low-pressure chemical vapor deposition (LPCVD).
Journal ArticleDOI
Thin-film transistors with polycrystalline silicon prepared by a new annealing method
TL;DR: In this article, a nucleation by rapid thermal annealing (RTA) and grain growth in furnaces was developed to obtain high-quality polycrystalline silicon (poly-Si) and to reduce the long annaling time for solid-phase crystallization (SPC) of amorphorus silicon (a-Si), without a decrease in grain size.
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