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Preparation and Properties of Piezoelectric Lead Zirconate Titanate Thin Films for Microsensors and Microactuators by Sol-Gel Processing

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TLDR
In this article, a 20mol% Pb excess PZT film has good piezoelectric properties, and the dielectric constant, the piezeric constant d31 and the spontaneous polarization Ps are 1800, 30.0×10-2C/m2 and 39.2× 10-12C/N, respectively.
Abstract
PZT thin films for microsensors and microactuators were prepared from lead acetate and zirconium, titanium alkoxide solution by sol-gel processing. High-performance, crack-free, thin (3.1μm) films were acquired by multiple coating, and high-temperture annealing.PbO evaporation occurred on firing. This is caused by the lack of Pb and the structure is divided into a perovskite phase and the amorphous and/or nanocrystal regions. The existence of the amorphous and/or nanocrystal region reduces the dielectric and piezoelectric constants. Excess Pb diminishes the amorphous and/or nanocrystal region and improves the piezoelectric and ferroelectric properties.A 20mol% Pb excess PZT film has good piezoelectric properties. The dielectric constant er, the piezoelectric constant d31 and the spontaneous polarization Ps are 1800, 30.0×10-2C/m2 and 39.2×10-12C/N, respectively. These values are similar to those of bulk PZT ceramics. This PZT film will be used in the fabrication of microactuators and microsensors.

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Journal ArticleDOI

The wafer flexure technique for the determination of the transverse piezoelectric coefficient (d31) of PZT thin films

TL;DR: In this paper, a simple and inexpensive method for evaluating the transverse piezoelectric coefficient (d 31 ) of PZT thin films is described. The technique is based upon the flexure of a coated substrate, which imparts an ac two-dimensional stress to the PZE. The surface charge generated via the mechanical loading is converted to a voltage by an active integrator.
Journal ArticleDOI

Lead zirconate titanate films for d33 mode cantilever actuators

TL;DR: In this paper, a PZT thin film on a low stress silicon nitride (Si x N y ) support buffered by a layer of ZrO 2 was fabricated using surface micromaching techniques.
Journal ArticleDOI

Combined effect of preferential orientation and Zr/Ti atomic ratio on electrical properties of Pb(ZrxTi1−x)O3 thin films

TL;DR: In this paper, a single perovskite PZT thin film with absolute (100) texture was obtained, when lead oxide was used as the seeding crystal, whereas titanium dioxide resulted in highly [111]-oriented PZTs.
Journal ArticleDOI

Stress evolution on gel-to-ceramic thin film conversion

TL;DR: In situ cracking observation, uncracking critical thickness evaluation and in situ stress measurement were conducted during heating for alkoxide-derived gel coating films in this paper, which indicated that higher water-to-alkoxide ratios in solutions and lower heating rates result in larger inplane tensile stress to be generated in the heating-up stage, which was thought to cause the cracking at lower temperatures.
Journal ArticleDOI

PZT ceramic/ceramic 0-3 nanocomposite films for ultrasonic transducer applications

TL;DR: In this paper, a lead zirconate titanate (PZT) ceramic/ceramic 0-3 nanocomposite films of several micron thickness were fabricated using a modified sol-gel process.
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