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Journal ArticleDOI

Preparation of Thick Crystalline Films of Tin Oxide and Porous Glass Partially Filled with Tin Oxide

R. F. Bartholomew, +1 more
- 01 Sep 1969 - 
- Vol. 116, Iss: 9, pp 1205-1208
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This article is published in Journal of The Electrochemical Society.The article was published on 1969-09-01. It has received 34 citations till now. The article focuses on the topics: Tin oxide & Graphene oxide paper.

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Transparent conductors—A status review

TL;DR: In this paper, the authors present a comprehensive and up-to-date description of the deposition techniques, electro-optical properties, solid state physics of the electron transport and optical effects and some applications of these transparent conductors.
Journal ArticleDOI

Structures and properties of Ormosils

TL;DR: Organically modified silicates (ORMOSILS) can be conveniently divided into three types as discussed by the authors : A, B and C. In Type A, the organic such as a dye, is mixed into the sol-gel liquid solution.
Journal ArticleDOI

X-ray studies of SnO2 prepared by chemical vapour deposition

Kwihoon Kim, +1 more
- 01 Aug 1986 - 
TL;DR: In this article, it was shown that SnO2 films at temperatures above 400°C are polycrystalline with the tetragonal rutile structure and grow with a (301) preferred orientation.
Journal ArticleDOI

SnO2 films prepared by activated reactive evaporation

TL;DR: In this article, a transparent conducting films of SnO2 doped with antimony were prepared on glass substrates by activated reactive evaporation for the first time, and the sheet resistance and optical transmittance in the wavelength range 0.4-1.6 μm were studied as functions of various deposition parameters such as the ambient pressure of an 85%Ar15%O2 mixture, the substrate temperature and the antimony doping concentration in the SnSb alloys.
Journal ArticleDOI

Physical properties of tin oxide films deposited by oxidation of SnCl2

TL;DR: In this paper, high transparent and conducting SnO 2 films with low resistivity and high transmission were produced by the oxidation of SnCl 2 at relatively low temperatures using the oxygen flow rate corresponding to the minimum resistivity.