Patent
Process of making a polysilicon barrier layer in a self-aligned contact module
TLDR
In this article, a method for forming a metal contact in a self aligned contact region over a impurity region in a substrate which comprises forming a doped polysilicon layer over the device surface except in a contact area is presented.Abstract:
A method for forming a metal contact in a self aligned contact region over a impurity region in a substrate which comprises forming a doped polysilicon layer over the device surface except in a contact area A thin polysilicon barrier layer and a metal layer, preferably tungsten, are then formed over the polysilicon layer and the contact area The resulting metal contact has superior step coverage, lower resistivity, and maintains the shallow junction depth of buried impurity regionsread more
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Patent
Cyclical epitaxial deposition and etch
Matthias Bauer,Shawn G. Thomas +1 more
TL;DR: In this paper, a silicon-source containing vapor is used to selectively deposite high quality epitaxial material on areas of a substrate, such as source and drain recesses.
Patent
Selective epitaxial formation of semiconductor films
Matthias Bauer,Keith Doran Weeks +1 more
TL;DR: In this paper, a cyclical process of repeated blanket deposition and selective etching is used to selectively form epitaxial layers (125) in semiconductor windows, which are selectively formed by using a germanium catalyst during the etch phases of the process.
Patent
Metal silicide, metal germanide, methods for making the same
TL;DR: In this paper, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate.
Patent
High throughput cyclical epitaxial deposition and etch process
TL;DR: In this paper, an inert carrier gas is provided with a silicon-containing source without hydrogen carrier gas, and an etchant is used to selectively etch deposited material without hydrogen.
Patent
Methods for depositing nickel films and for making nickel silicide and nickel germanide
TL;DR: In this article, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate.
References
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Patent
Method for fabricating a semiconductor integrated circuit device including the self-aligned formation of a contact window
TL;DR: In this paper, a fabrication method for a semiconductor integrated circuits which permits the self-aligned formation of contact windows without causing shorts or breaks in the interconnecting lines in the device is provided.
Patent
Semiconductor device having multilayer silicide contact system and process of fabrication thereof
TL;DR: In this paper, a multilayer contact system comprising a metal silicide layer of the silicide of a refractory metal, the metal's silicide directly contacting the surface portion of the heavily doped semiconductor layer and being lower in dopant concentration than the predetermined dopant concentrations of the semiconductor layers, and an electrode layer including a highly conductive metal on the barrier layer was proposed.
Patent
Method of forming contact structure
Hiroshi Yamamoto,Kazuyuki Sawada +1 more
TL;DR: In this article, a contact hole is formed with an etching stopper film by way of self-alignment, and a second step is removed from the contact hole by removing unnecessary intermediate film layers from the connected regions.
Patent
Process for making integrated-circuit device metallization
TL;DR: In this article, a periodic interruption of grain growth during chemical vapor deposition of a metal film results in enhanced surface smoothness and ease of patterning, by deposition of an auxiliary material which may be conductive, may form a conductive compound or alloy, or may be eliminated upon additional metal deposition.
Patent
Method of manufacturing a semiconductor device including a titanium disilicide contact
TL;DR: In this article, a method of manufacturing a semiconductor device, in which a titanium disilicide layer is formed on a substrate by means of a chemical reaction activated by a plasma from the gaseous phase, was described.