Quantized conductance of Si atomic wires
TLDR
In this article, the quantum transport properties of a chain of Si atoms connected to the outside through long leads were investigated and the Si wires were found to be metallic and they observed quantized conductance in units of 2e − 2 − 2 /h.Abstract:
We have performed first-principles pesudopotential calculations of the quantum transport properties of a chain of Si atoms connected to the outside through long leads. By solving a three-dimensional quantum scattering problem we have computed the conductance for several atomic wires with up to eight Si atoms. The Si atomic wires are found to be metallic and we observed quantized conductance in units of ${2e}^{2}/h.$ A conductance dip is found to develop near the onset of the second quantized plateau as the number of atoms increases, and this can be explained by the existence of a gap in the density of states when the atomic chain is infinitely long.read more
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Functionalized carbon nanotubes and device applications
Salim Ciraci,Sefa Dag,Taner Yildirim,Oguz Gulseren,Ramazan Tuğrul Senger,Ramazan Tuğrul Senger +5 more
TL;DR: In this article, the authors examine selected physical properties of bare carbon nanotubes, and then study how the mechanical and electronic properties of different tubes can be modified by radial strain, structural defects and adsorption of foreign atoms and molecules.
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First-principles treatments of electron transport properties for nanoscale junctions
Yoshitaka Fujimoto,Kikuji Hirose +1 more
TL;DR: In this article, a real-space finite-difference approach within the framework of density functional theory is proposed to determine the scattering wave function infinitely extending over the entire system by carrying out the wave-function matching based on a boundary-value problem near the boundaries of the transition region.
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Conductance Quantization in Resistive Random Access Memory
TL;DR: The operating principles of RRAM are introduced, followed by the summarization of the basic conductance quantization phenomenon in RRAM and the related RS mechanisms, device structures, and material system, and the theory and modeling of quantum transport in R RAM are discussed.
Proceedings ArticleDOI
Analytic modeling of leakage current through multiple breakdown paths in SiO/sub 2/ films
Enrique Miranda,Jordi Suñé +1 more
TL;DR: In this paper, the breakdown path is treated as a three dimensional quantum point contact in which an effective potential barrier arises as a consequence of the quantization of the transverse momentum of the passing electrons.
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Atomic chains of group-IV elements and III-V and II-VI binary compounds studied by a first-principles pseudopotential method
TL;DR: In this article, the first-principles plane wave pseudopotential method was used to study structural, electronic, and transport properties of atomic chains of group-IV elements and group III-V and group II-VI binary compounds.
References
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Quantum transport through atomic wires
TL;DR: In this article, the authors investigated quantum transport through long wires in which a section consists of one or several Al atoms in a chain, and the self-consistent ground state electronic potential was obtained using the first principles ab initio method and the conductance was calculated by solving a three-dimensional quantum scattering problem.