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Journal ArticleDOI

Quantum size and surface effects in the electrical resistivity and high-energy electron reflectivity of ultrathin lead films

M. Jal, +2 more
- 15 Sep 1988 - 
- Vol. 38, Iss: 8, pp 5272-5280
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TLDR
In this paper, the electrical resistivity of thin epitaxial Pb films on Si(111) surfaces and the intensity of the specular beam in high-energy electron diffraction from these films are reported.
Abstract
Oscillations of the electrical resistivity of thin epitaxial Pb films on Si(111) surfaces and of the intensity of the specular beam in high-energy electron diffraction from these films are reported. They are in part due to a surface effect, the scattering of internal and external electrons at surface steps whose density varies periodically during the growth. In part they are caused by a volume effect, the quantum size effect due to the quantization of the Fermi momentum of the film electrons and of the normal component of the wave vector of the incident electrons, respectively.

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Superconductivity Modulated by Quantum Size Effects

TL;DR: The observed oscillatory behavior of the superconducting transition temperature when the film thickness was increased by one atomic layer at a time suggests the possibility of modifying superconductivity and other physical properties of a thin film by exploiting well-controlled and thickness-dependent quantum size effects.
Journal ArticleDOI

Photoemission studies of quantum well states in thin films

TL;DR: In this paper, the authors review the basic physics and applications of quantum well spectroscopy, and provide a detailed understanding of the behavior of simple quantum wells including the effects of lattice mismatch, which provides a useful basis for investigating the properties of multilayers.
Journal ArticleDOI

Thickness dependent electrical resistivity of ultrathin (<40 nm) Cu films

TL;DR: In this article, Namba's model that uses the measured surface roughness provides the best description of the resistivity-thickness behavior in sub-40-nm thick Cu films.
Journal ArticleDOI

Quantum well structures in thin metal films: simple model physics in reality?

TL;DR: In this paper, the relationship of the phase accumulation model to the real metallic quantum well is explored, including the way that the exact nature of the boundaries can be taken into account in a relative simple way through the ''phase accumulation model''.
Journal ArticleDOI

Magnetoresistance values exceeding 21% in symmetric spin valves

TL;DR: In this paper, the giant magnetoresistance (GMR) effect exceeding 21% in symmetric spin valves was reported, the highest value ever reported for such structures, and the key elements in this achievement were the use of a Co/Cu/Co/co/cu/Co+Co multilayer, in which the center Co layer is substantially thicker than the outer Co layers and the antiferromagnetic insulator NiO at the top and bottom to pin the adjacent Co layers magnetically.
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