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Rectifying Semiconductor Contacts

H. K. Henisch
- 01 Nov 1956 - 
- Vol. 103, Iss: 11, pp 637-643
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This article is published in Journal of The Electrochemical Society.The article was published on 1956-11-01. It has received 265 citations till now.

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Metal-semiconductor contacts

TL;DR: In this article, a review of the present knowledge of metal-semiconductor contacts is given, including the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance.
Journal ArticleDOI

Studies of tunnel MOS diodes, I. Interface effects in silicon Schottky diodes

TL;DR: In this paper, a theoretical and experimental study has been made of silicon Schottky diodes in which the metal and semiconductor are separated by a thin interfacial film.
Journal ArticleDOI

Surface States and Barrier Height of Metal‐Semiconductor Systems

TL;DR: In this paper, the dependence of the barrier height of metal-semiconductor systems upon the metal work function is derived based on the following assumptions: (1) the contact between the metal and the semiconductor has an interfacial layer of the order of atomic dimensions; it is further assumed that this layer is transparent to electrons with energy greater than the potential barrier but can withstand potential across it.
Journal ArticleDOI

The structure and properties of metal-semiconductor interfaces

TL;DR: In this article, the contributions of surface science research to the understanding of metal-semiconductor interfaces are surveyed and a wide range of ultra-high vacuum techniques now available for probing metal-semiconductor interfaces on an atomic scale, and assess the current state of knowledge of the chemical, geometrical, and electronic structures of MSS interfaces.
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Current transport in metal-semiconductor barriers

TL;DR: In this paper, a theory for calculating the magnitude of majority carrier current flow in metal-semiconductor barriers is developed which incorporates Schottky's diffusion (D) theory and Bethe's thermionic emission (T) theory into a single T-D emission theory, and which includes the effects of the image force.