Patent
Reliability barrier integration for Cu application
Ming Xi,Paul F. Smith,Ling Chen,Michael X. Yang,Mei Chang,Fusen Chen,Christophe Marcadal,Jenny Lin +7 more
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TLDR
In this article, the authors present a process sequence and related hardware for filling a patterned feature on a substrate with a metal, such as copper, which consists of first forming a reliable barrier layer in the patterned features to prevent diffusion of the metal into the dielectric layer through which the pattern is formed.Abstract:
Embodiments of the present invention provide a process sequence and related hardware for filling a patterned feature on a substrate with a metal, such as copper. The sequence comprises first forming a reliable barrier layer in the patterned feature to prevent diffusion of the metal into the dielectric layer through which the patterned feature is formed. One sequence comprises forming a generally conformal barrier layer over a patterned dielectric, etching the barrier layer at the bottom of the patterned feature, depositing a second barrier layer, and then filling the patterned feature with a metal, such as copper.read more
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Patent
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Dan Maydan,Sasson Somekh,David Nin-Kou Wang,David Cheng,Masato M. Toshima,Isaac Harari,Peter D. Hoppe +6 more
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