A
Alessandra Satta
Researcher at Katholieke Universiteit Leuven
Publications - 38
Citations - 1656
Alessandra Satta is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Ion implantation & Germanium. The author has an hindex of 18, co-authored 37 publications receiving 1614 citations. Previous affiliations of Alessandra Satta include IMEC.
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Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
Alessandra Satta,Karen Maex,Kai-Erik Elers,Ville Antero Saanila,Pekka J. Soininen,Suvi Haukka +5 more
TL;DR: In this paper, the atomic layer deposition (ALD) was used to achieve a highly conformal coverage of the insulating sidewalls in the opening of the trench, thus leaving the conductive material at a via bottom exposed for direct metal-to-metal contact.
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Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
David P. Brunco,B. De Jaeger,Geert Eneman,Jerome Mitard,Geert Hellings,Alessandra Satta,Valentina Terzieva,Laurent Souriau,Frederik Leys,Geoffrey Pourtois,Michel Houssa,Gillis Winderickx,E. Vrancken,Sonja Sioncke,Karl Opsomer,G. Nicholas,Matty Caymax,Andre Stesmans,J. Van Steenbergen,Paul W. Mertens,Marc Meuris,M.M. Heyns +21 more
TL;DR: In this article, thin, strained epi-Si is examined as a passivation of the Ge/gate dielectric interface, with an optimized thickness found at 6 monolayers.
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Diffusion, activation and recrystallization of boron implanted in preamorphized and crystalline germanium
Alessandra Satta,Eddy Simoen,Trudo Clarysse,Tom Janssens,A. Benedetti,B. De Jaeger,Marc Meuris,W. Vandervorst +7 more
TL;DR: In this paper, the authors investigated diffusion and activation of boron implanted with 6 keV energy to a maximum concentration of 8.0×1020atoms∕cm3 in crystalline germanium (c-germanium) and preamorphized germium, employing rapid thermal annealing in the range of 400-600°C.
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Ion-implantation issues in the formation of shallow junctions in germanium
Eddy Simoen,Alessandra Satta,Antonio D'Amore,Tom Janssens,Trudo Clarysse,Koen Martens,D De Jaeger,A. Benedetti,I. Hoflijk,Bert Brijs,Marc Meuris,Wilfried Vandervorst +11 more
TL;DR: In this article, an overview of the current state-of-the-art in the formation of shallow junctions in germanium by ion implantation, covering the issues of dopant activation, diffusion and defect removal.
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P implantation doping of Ge: Diffusion, activation, and recrystallization
Alessandra Satta,Tom Janssens,Trudo Clarysse,Eddy Simoen,Marc Meuris,A. Benedetti,I. Hoflijk,B. De Jaeger,Caroline Demeurisse,W. Vandervorst +9 more
TL;DR: In this article, the authors studied doping profiles, activation levels, and defect annealing of P introduced in Ge by ion implantation at different doses and energy, and annealed under various conditions by rapid thermal cooling.