Patent
Selective electroless copper deposited interconnect plugs for ULSI applications
TLDR
In this article, a via opening in an inter-level dielectric (ILD) provides a path for connecting two conductive regions separated by the ILD, and an electroless copper deposition technique is used to auto-catalytically deposit copper in the via.Abstract:
A method or utilizing electroless copper deposition to selectively form encapsulated copper plugs to connect conductive regions on a semiconductor. A via opening in an inter-level dielectric (ILD) provides a path for connecting two conductive regions separated by the ILD. Once the underlying metal layer is exposed by the via opening, a SiN or SiON dielectric encapsulation layer is formed along the sidewalls of the via. Then, a contact displacement technique is used to form a thin activation layer of copper on a barrier metal, such as TiN, which is present as a covering layer on the underlying metal layer. After the contact displacement of copper on the barrier layer at the bottom of the via, an electroless copper deposition technique is then used to auto-catalytically deposit copper in the via. The electroless copper deposition continues until the via is almost filled, but leaving sufficient room at the top in order to form an upper encapsulation layer. The SiN or SiON sidewalls, the bottom barrier layer and the cap barrier layer function to fully encapsulate the copper plug in the via. The plug is then annealed.read more
Citations
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References
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Patent
Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias
Melanie Min-Chieh Chow,John Edward Cronin,William Leslie Guthrie,Carter Welling Kaanta,Barbara Jean Luther,William John Patrick,Kathleen Alice Perry,Charles L. Standley +7 more
TL;DR: In this article, a planarized layer of insulation is deposited over a first level of patterned conductive material to which contacts are to be selectively established, and the first layer then is covered by an etch stop material.
Journal ArticleDOI
Copper Corrosion With and Without Inhibitors
V. Brusic,M. A. Frisch,B. N. Eldridge,F. P. Novak,Frank B. Kaufman,B. M. Rush,Gerald S. Frankel +6 more
TL;DR: In this article, the capacity of lH-benzotriazole (1H-BTA) to provide a protective and stable surface film able to withstand harsh chemical and thermal environments was studied.
Patent
Alkaline free electroless deposition
Yosef Y. Shacham,Roman Bielski +1 more
TL;DR: Alkali-free layers of pure metals such as copper, nickel, and cobalt were deposited on noble metal or noble metal sensitized substrates by electroless deposition using pure quaternary ammonium hydroxides or quaternaries phosphonium hyroxides to generate the hydroxyl ion (OH - ) needed to produce electrons for the metal reduction.
Patent
Process for metallizing integrated circuits with electrolytically-deposited copper
TL;DR: In this paper, a masked conformal electrodeposition process for copper metallization of integrated circuits is described, which provides excellent step coverage for sub-micron contact openings, even for contact openings as small as 0.5 microns in diameter.
Patent
Semiconductor device using copper metallization
TL;DR: A semiconductor device comprises a silicon substrate, an insulating film in which a contact hole is formed, a metallic layer deposited on said silicon substrate through the contact hole, for forming an ohmic contact to the silicon substrate and a barrier layer, for preventing reaction and interdiffusion between copper and silicon, including at least copper deposited on the barrier layer.