Journal ArticleDOI
Resistivity of Doped Polycrystalline Silicon Films
A. L. Fripp,L. H. Slack +1 more
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This article is published in Journal of The Electrochemical Society.The article was published on 1973-01-01. It has received 50 citations till now. The article focuses on the topics: Nanocrystalline silicon & Monocrystalline silicon.read more
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The electrical properties of polycrystalline silicon films
TL;DR: In this article, Boron doses of 1×1012-5×1015/cm2 were implanted at 60 keV into 1-μm-thick polysilicon films and Hall and resistivity measurements were made over a temperature range −50-250 °C.
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Dopant segregation in polycrystalline silicon
TL;DR: In this paper, the dopant segregation at grain boundaries in polycrystalline silicon has been investigated, and a theory of segregation in systems of small particles has been developed, using this theory, the heat of segregation of arsenic and phosphorus, and the number of active dopant atoms within the grain boundaries as a function of annealing temperature.
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A model for conduction in polycrystalline silicon—Part I: Theory
TL;DR: In this paper, a phenomenological model for the electrical conduction in polycrystalline silicon is developed, which combines dopant segregation, carrier trapping, and carrier reflection at grain boundaries.
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Conduction properties of lightly doped, polycrystalline silicon
TL;DR: In this paper, a hyperbolic sine relationship describing the currentvoltage characteristics of lightly-doped, n-type polycrystalline silicon films is derived based on a previous model which assumes that trapped electrons cause a surface depletion zone and a potential barrier at each grain boundary.
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Dependence of resistivity on the doping level of polycrystalline silicon
TL;DR: In this article, the electrical resistivity of polycrystalline silicon films has been studied as a function of doping concentration and heat treatment, and a model based on high dopant atom segregation in the grain boundaries is proposed to explain the results.