Journal ArticleDOI
Dopant segregation in polycrystalline silicon
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TLDR
In this paper, the dopant segregation at grain boundaries in polycrystalline silicon has been investigated, and a theory of segregation in systems of small particles has been developed, using this theory, the heat of segregation of arsenic and phosphorus, and the number of active dopant atoms within the grain boundaries as a function of annealing temperature.Abstract:
Dopant segregation at grain boundaries in polycrystalline silicon has been investigated. Arsenic, phosphorus, and boron were ion implanted into low‐pressure, chemically‐vapor‐deposited polycrystalline‐silicon films. All films were then annealed at 1000 °C for 1 h, and some were subsequently further annealed at 800, 850, or 900 °C for 64, 24, or 12 h, respectively. For phosphorus and arsenic the room‐temperature resistivity of the films was found to be higher after annealing at lower temperatures. By successively annealing the same sample at lower and higher temperatures, the resistivity would repeatedly increase and decrease, indicating reversible dopant segregation at the grain boundaries. Hall measurements were used to estimate the number of active dopant atoms within the grains and the number of atoms segregated at the grain boundaries as a function of annealing temperature. A theory of segregation in systems of small particles has been developed. Using this theory, the heat of segregation of arsenic and phosphorus in polycrystalline silicon was calculated. For boron no appreciable segregation was observed.read more
Citations
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Journal ArticleDOI
Grain boundaries in semiconductors
TL;DR: In this article, a review of the available experimental and theoretical understanding on the structure and electronic properties of grain boundaries in semiconducting materials is presented, where high-resolution electron microscope images of interfaces are interpreted within the framework of the structural unit model of grain boundary, and the electronic properties are discussed with relation to the popular symmetric Schottky barrier model for charge trapping and potential barrier formation.
Journal ArticleDOI
Modeling and optimization of monolithic polycrystalline silicon resistors
TL;DR: In this article, the effect of grain size on the sensitivity of polysilicon resistivity versus doping concentration is studied theoretically and experimentally, and it is shown that an increase in grain size from 230 to 1220 A drastically reduces the sensitivity to doping levels by two orders of magnitude.
Journal ArticleDOI
Thermal conductivity of doped polysilicon layers
TL;DR: In this paper, thermal conductivity measurements for low-pressure chemical-vapor deposition (LPCVD) polysilicon layers of thickness near 1 /spl mu/m doped with boron and phosphorus at concentrations between 2.0/spl times/10/sup 18/ cm/sup -3/ and 4.1/spl µ/m for temperatures from 20 K to 320 K.
Journal ArticleDOI
Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon
Satwinder Malhi,Hisashi Shichijo,Sanjay K. Banerjee,R. Sundaresan,M. Elahy,Gordon P. Pollack,William F. Richardson,Ashwin H. Shah,L.R. Hite,R.H. Womack,Pallab K. Chatterjee,H.W. Lam +11 more
TL;DR: In this paper, a design methodology was developed that yields devices which have low threshold voltage, high drive current, low leakage current, tight parameteric control, and reduced topology, while requiring no nonstandard materials, processes, and tools.
Journal ArticleDOI
The application of poly-Si/SiOx contacts as passivated top/rear contacts in Si solar cells
TL;DR: In this paper, the impact of doping species, ion dose, and poly-Si thickness on the surface passivation of polySi contacts was studied, and the upper bound for the parasitic absorption losses was quantified to about 0.5 ǫ/cm2 per 10-nm polySi layer thickness.
References
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Journal ArticleDOI
The electrical properties of polycrystalline silicon films
TL;DR: In this article, Boron doses of 1×1012-5×1015/cm2 were implanted at 60 keV into 1-μm-thick polysilicon films and Hall and resistivity measurements were made over a temperature range −50-250 °C.
Journal ArticleDOI
Transport properties of polycrystalline silicon films
TL;DR: In this article, the transport properties of polycrystalline silicon films are examined and interpreted in terms of a modified grain-boundary trapping model, based on the assumption of both a δ-shaped and a uniform energy distribution of interface states.
Journal ArticleDOI
Electronic properties of substitutionally doped amorphous Si and Ge
W. E. Spear,P. G. Le Comber +1 more
TL;DR: In this paper, it was shown that substitutional doping of an amorphous semiconductor is possible and can provide control of the electronic properties over a wide range, which corresponds to a movement of the Fermi level of 1·2 eV.
Journal ArticleDOI
Binary alloy surface compositions from bulk alloy thermodynamic data
Frank L. Williams,D. Nason +1 more
TL;DR: In this paper, the surface composition of binary alloys is determined by minimizing alloy surface free energy with respect to atom exchange between the surface and the bulk, using a pairwise bound model of the solid with a broken bond surface.
Journal ArticleDOI
Hall Mobility in Chemically Deposited Polycrystalline Silicon
TL;DR: In this article, the authors performed Hall mobility measurements on polycrystalline silicon films with and without doping impurities added during deposition or by diffusion from a doped vapordeposited oxide.