Journal ArticleDOI
Resonant tunneling transistor with quantum well base and high‐energy injection: A new negative differential resistance device
TLDR
In this article, a negative conductance device consisting of a heterojunction bipolar transistor with a quantum well and a symmetric double barrier or a superlattice in the base region is proposed.Abstract:
We propose a new negative conductance device consisting of a heterojunction bipolar transistor with a quantum well and a symmetric double barrier or a superlattice in the base region. The key difference compared to previously studied structures is that resonant tunneling is achieved by high‐energy minority carrier injection into the quantum state rather than by application of an electric field. Thus this novel geometry maintains the crucial, structural symmetry of the double barrier, allowing unity transmission at all resonance peaks and higher peak‐to‐valley ratios and currents compared to conventional resonant tunneling structures. Both tunneling and ballistic injection in the base are considered. These new functional devices have significant potential for a variety of signal processing and multiple‐valued logic applications and for the study of the physics of transport in superlattices.read more
Citations
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Journal ArticleDOI
Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications
TL;DR: In this article, a simple expression for the low field mobility in the miniband conduction regime is derived; localization effects, hopping conduction, and effective mass filtering are discussed.
Journal ArticleDOI
Calculation of transmission tunneling current across arbitrary potential barriers
Yuji Ando,T. Itoh +1 more
TL;DR: In this paper, a multistep potential approximation method was proposed to calculate quantum mechanical transmission probability and current across arbitrary potential barriers by using the multi-stage potential approximation, which is applicable to various potential barriers and wells, including continuous variations of potential energy and electron effective mass.
Journal ArticleDOI
Frequency limit of double‐barrier resonant‐tunneling oscillators
TL;DR: In this article, it was shown that the intrinsic RC delay of a single barrier limits the frequency of active oscillations to fmax = 1/(2πτ), where τ =eα−1(λ/c)exp(4πd/λ) with λ being the de Broglie wavelength of the tunneling electron, d the barrier thickness, e the dielectric permittivity, c the speed of light, and α≊1/137 the fine-structure constant.
Journal ArticleDOI
Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices
TL;DR: A new generation of devices with unique capabilities, ranging from solid-state photomultipliers to resonant tunneling transistors, is emerging from this approach to band-gap engineering.
Journal ArticleDOI
Overview of nanoelectronic devices
TL;DR: An overview of research developments toward nanometer-scale electronic switching devices for use in building ultra-densely integrated electronic computers and two classes of alternatives to the field-effect transistor are considered: quantum-effect and single-electron solid-state devices and molecular electronic devices.
References
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Journal ArticleDOI
Tunneling in a finite superlattice
Raphael Tsu,Leo Esaki +1 more
TL;DR: In this article, the transport properties of a finite superlattice from the tunneling point of view have been computed for the case of a limited number of spatial periods or a relatively short electron mean free path.
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Resonant tunneling in semiconductor double barriers
TL;DR: In this article, a double-barrier structure with a thin GaAs sandwiched between two GaAlas barriers has been shown to have resonance in the tunneling current at voltages near the quasistationary states of the potential well.
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Resonant tunneling through quantum wells at frequencies up to 2.5 THz
TL;DR: In this paper, a single quantum well of GaAs has been observed, and the current singularity and negative resistance region are dramatically improved over previous results, and detecting and mixing have been carried out at frequencies as high as 2.5 THz.
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Physics of resonant tunneling. The one-dimensional double-barrier case
Bruno Ricco,M. Ya. Azbel +1 more
TL;DR: In this article, the effect of an externally applied electric field is considered, and it is shown that with fully symmetrical barriers it leads to weaker resonances than otherwise possible, thus contributing to a reduction of resonance effects on the usual experimental time scale.
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Parabolic quantum wells with the G a A s − Al x Ga 1 − x As system
TL;DR: In this paper, it was shown that parabolic quantum wells can lead to parity-allowed (n = 2)-forbidden) transitions with strengths greater than that of nearby square wells.