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RF bulk acoustic wave filters for communications

研也 橋本
TLDR
This paper describes the design and Fabrication of BAW Devices and the system-in-Package integration of these devices, and provides a comparison with SAW Devices.
Abstract
Background and History. Resonator and Filter Topologies. Baw Device Basics. Design and Fabrication of BAW Devices. FBAR Resonators and Filters. Comparison with SAW Devices. Films Deposition for BAW Devices. Characterization of BAW Devices. Monolithic Integration. System-in-Package (SiP) Integration. Index.

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Citations
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Quantum acoustics with superconducting qubits

TL;DR: In this article, the authors demonstrate a high frequency bulk acoustic wave resonator that is strongly coupled to a superconducting qubit using piezoelectric transduction and demonstrate basic quantum operations on the coupled qubit-phonon system.
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Gallium Nitride as an Electromechanical Material

TL;DR: In this paper, the authors review the electromechanical, thermal, acoustic, and piezoelectric properties of GaN and describe the working principle of some of the reported high-performance GaN-based microelectromechanical components.
Journal ArticleDOI

Controlling phonons and photons at the wavelength scale: integrated photonics meets integrated phononics

TL;DR: In this article, the state of the art in nanoscale electro-and optomechanical systems with a focus on scalable platforms such as silicon is summarized and perspectives on what these new systems may bring and what challenges they face in the coming years.
Journal ArticleDOI

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

TL;DR: By looking into the challenges of high frequency, wide bandwidth, miniaturization, and high power level, this work provides clues to specific materials, structure designs, and RF integration technologies for BAW resonators.
Journal ArticleDOI

Micromachined One-Port Aluminum Nitride Lamb Wave Resonators Utilizing the Lowest-Order Symmetric Mode

TL;DR: In this article, the performance of one-port aluminum nitride (AlN) Lamb wave resonators utilizing the lowest-order symmetric mode with electrically open, grounded, and floating bottom electrode configurations are theoretically and experimentally investigated.
References
More filters
Journal ArticleDOI

Gallium Nitride as an Electromechanical Material

TL;DR: In this paper, the authors review the electromechanical, thermal, acoustic, and piezoelectric properties of GaN and describe the working principle of some of the reported high-performance GaN-based microelectromechanical components.
Journal ArticleDOI

Controlling phonons and photons at the wavelength scale: integrated photonics meets integrated phononics

TL;DR: In this article, the state of the art in nanoscale electro-and optomechanical systems with a focus on scalable platforms such as silicon is summarized and perspectives on what these new systems may bring and what challenges they face in the coming years.
Journal ArticleDOI

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

TL;DR: By looking into the challenges of high frequency, wide bandwidth, miniaturization, and high power level, this work provides clues to specific materials, structure designs, and RF integration technologies for BAW resonators.
Journal ArticleDOI

Micromachined One-Port Aluminum Nitride Lamb Wave Resonators Utilizing the Lowest-Order Symmetric Mode

TL;DR: In this article, the performance of one-port aluminum nitride (AlN) Lamb wave resonators utilizing the lowest-order symmetric mode with electrically open, grounded, and floating bottom electrode configurations are theoretically and experimentally investigated.
Journal ArticleDOI

Anchor Losses in AlN Contour Mode Resonators

TL;DR: In this article, the authors analyzed possible sources of dissipation in AlN contour mode resonators for three different resonance frequency devices (220 MHz, 370 MHz, and 1.05 GHz).