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RF bulk acoustic wave filters for communications
TLDR
This paper describes the design and Fabrication of BAW Devices and the system-in-Package integration of these devices, and provides a comparison with SAW Devices.Abstract:
Background and History. Resonator and Filter Topologies. Baw Device Basics. Design and Fabrication of BAW Devices. FBAR Resonators and Filters. Comparison with SAW Devices. Films Deposition for BAW Devices. Characterization of BAW Devices. Monolithic Integration. System-in-Package (SiP) Integration. Index.read more
Citations
More filters
Journal ArticleDOI
Quantum acoustics with superconducting qubits
Yiwen Chu,Prashanta Kharel,William H. Renninger,Luke Burkhart,Luigi Frunzio,Peter T. Rakich,Robert Schoelkopf +6 more
TL;DR: In this article, the authors demonstrate a high frequency bulk acoustic wave resonator that is strongly coupled to a superconducting qubit using piezoelectric transduction and demonstrate basic quantum operations on the coupled qubit-phonon system.
Journal ArticleDOI
Gallium Nitride as an Electromechanical Material
Mina Rais-Zadeh,Vikrant J. Gokhale,Azadeh Ansari,Marc Faucher,Didier Theron,Yvon Cordier,Lionel Buchaillot +6 more
TL;DR: In this paper, the authors review the electromechanical, thermal, acoustic, and piezoelectric properties of GaN and describe the working principle of some of the reported high-performance GaN-based microelectromechanical components.
Journal ArticleDOI
Controlling phonons and photons at the wavelength scale: integrated photonics meets integrated phononics
TL;DR: In this article, the state of the art in nanoscale electro-and optomechanical systems with a focus on scalable platforms such as silicon is summarized and perspectives on what these new systems may bring and what challenges they face in the coming years.
Journal ArticleDOI
Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review
TL;DR: By looking into the challenges of high frequency, wide bandwidth, miniaturization, and high power level, this work provides clues to specific materials, structure designs, and RF integration technologies for BAW resonators.
Journal ArticleDOI
Micromachined One-Port Aluminum Nitride Lamb Wave Resonators Utilizing the Lowest-Order Symmetric Mode
TL;DR: In this article, the performance of one-port aluminum nitride (AlN) Lamb wave resonators utilizing the lowest-order symmetric mode with electrically open, grounded, and floating bottom electrode configurations are theoretically and experimentally investigated.
References
More filters
Journal ArticleDOI
Gallium Nitride as an Electromechanical Material
Mina Rais-Zadeh,Vikrant J. Gokhale,Azadeh Ansari,Marc Faucher,Didier Theron,Yvon Cordier,Lionel Buchaillot +6 more
TL;DR: In this paper, the authors review the electromechanical, thermal, acoustic, and piezoelectric properties of GaN and describe the working principle of some of the reported high-performance GaN-based microelectromechanical components.
Journal ArticleDOI
Controlling phonons and photons at the wavelength scale: integrated photonics meets integrated phononics
TL;DR: In this article, the state of the art in nanoscale electro-and optomechanical systems with a focus on scalable platforms such as silicon is summarized and perspectives on what these new systems may bring and what challenges they face in the coming years.
Journal ArticleDOI
Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review
TL;DR: By looking into the challenges of high frequency, wide bandwidth, miniaturization, and high power level, this work provides clues to specific materials, structure designs, and RF integration technologies for BAW resonators.
Journal ArticleDOI
Micromachined One-Port Aluminum Nitride Lamb Wave Resonators Utilizing the Lowest-Order Symmetric Mode
TL;DR: In this article, the performance of one-port aluminum nitride (AlN) Lamb wave resonators utilizing the lowest-order symmetric mode with electrically open, grounded, and floating bottom electrode configurations are theoretically and experimentally investigated.
Journal ArticleDOI
Anchor Losses in AlN Contour Mode Resonators
Jeronimo Segovia-Fernandez,Massimiliano Cremonesi,Cristian Cassella,Attilio Frangi,Gianluca Piazza +4 more
TL;DR: In this article, the authors analyzed possible sources of dissipation in AlN contour mode resonators for three different resonance frequency devices (220 MHz, 370 MHz, and 1.05 GHz).