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Room temperature MBE deposition of Bi2Te3 and Sb2Te3 thin films with low charge carrier densities

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TLDR
In this article, the in-plane transport properties were measured at room temperature, the thermopower was 130 µV K−1 for Sb2Te3 and −153 ǫVǫK −1 for Bi 2Te3 thin films.
Abstract
Sb2Te3 and Bi2Te3 thin films were grown at room temperature on SiO2 substrates using MBE and were subsequently annealed at 250 °C. The films were stoichiometric, polycrystalline, textured, and yielded strikingly low charge carrier densities of about 2.7 × 1019 cm−3. The in-plane transport properties were measured at room temperature, the thermopower was 130 µV K−1 for Sb2Te3 and −153 µV K−1 for Bi2Te3 thin films. The small charge carrier densities are explained by a reduced antisite defect density due to the low temperatures to which the thin films were exposed during annealing.

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van der Waals epitaxy: 2D materials and topological insulators

TL;DR: Van der Waals epitaxy (VDWE) is an ideal method for growing 2D materials and topological insulators (TIs) onto a variety of substrates for heterostructure and integrated circuit technologies.
Journal ArticleDOI

High Yield Bi2Te3 Single Crystal Nanosheets with Uniform Morphology via a Solvothermal Synthesis

TL;DR: In this article, a hexagonal nanosheet of Bi2Te3 single crystals with uniform morphology was facilely synthesized through a high yield solvothermal route at low temperature (180 °C).
Journal ArticleDOI

Robust topological surface states in Sb 2 Te 3 layers as seen from the weak antilocalization effect

TL;DR: In this paper, weak antilocalization and electron-electron interaction effects are investigated in Sb${}_{2}$Te${}_3}$ layers using molecular-beam epitaxy, as revealed by the Kiessig oscillations in the x-ray reflectivity.
Journal ArticleDOI

Thermoelectric transport and Hall measurements of low defect Sb2Te3 thin films grown by atomic layer deposition

TL;DR: In this paper, the authors report highly textured Sb2Te3 thin films, grown by atomic layer deposition on Si/SiO2 wafers based on the reaction of SbCl3 and (Et3Si)2Te.
Journal ArticleDOI

Thermoelectric Characteristics of n-Type Bi2Te3 and p-Type Sb2Te3 Thin Films Prepared by Co-Evaporation and Annealing for Thermopile Sensor Applications

TL;DR: In this article, a thermoelectric thin-film device consisting of n-type Bi2Te3 and p-type Sb2Te-3 thinfilm legs was prepared on a glass substrate by using co-evaporation and annealing process.
References
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Journal ArticleDOI

Thin-film thermoelectric devices with high room-temperature figures of merit

TL;DR: Th thin-film thermoelectric materials are reported that demonstrate a significant enhancement in ZT at 300 K, compared to state-of-the-art bulk Bi2Te3 alloys, and the combination of performance, power density and speed achieved in these materials will lead to diverse technological applications.
Journal ArticleDOI

Effect of quantum-well structures on the thermoelectric figure of merit.

TL;DR: In this article, the authors proposed to use quantum-well superlattice structures to enhance the performance of thermoelectric coolers and showed that layering has the potential to increase significantly the figure of merit of a highly anisotropic material.
Journal ArticleDOI

The crystal structure of Bi2Te3−xSex

TL;DR: In this paper, it has been confirmed that Bi 2 Te 3 and Bi 2 Se 3 form complete solid solutions, their space group being D 5 3d - R 3 m. The unit cell dimensions for the specimens having various compositions are given.
Journal ArticleDOI

Evidence for the existence of antistructure defects in bismuth telluride by density measurements

TL;DR: In this paper, the existence of antistructure defects with an approximate energy of formation of 0.40 eV for n and p type bismuth telluride in equilibrium with various liquid compositions.
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