Journal ArticleDOI
Semiconducting Films of Antimony
TLDR
In this article, a theory based on lattice defects is proposed to explain the electrical behavior of antimony films, and activation energies were calculated from logR vs 1/T curves and gave values of ∼0.07 ev for low temperatures and ∼ 0.13 ev for high temperatures.Abstract:
Thin films of antimony were condensed onto substrates at various temperatures. Films deposited at liquid oxygen temperatures showed large negative temperature coefficients of resistance. In general, reversible resistance changes occurred if the films were cooled below a temperature previously reached; irreversible changes took place if the films were heated above that at which they were prepared. Activation energies were calculated from logR vs 1/T curves and gave values of ∼0.07 ev for low temperatures and ∼0.13 ev for high temperatures. There appeared to be little or no influence of evaporation rate or thickness on the activation energies. A theory based on lattice defects is proposed in order to explain the electrical behavior of the films.read more
Citations
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Journal ArticleDOI
The amorphous SbSe system
C. Wood,R. Mueller,L.R. Gilbert +2 more
TL;DR: In this paper, the complete compositional range of the amorphous SbSe system has been prepared in thin-film form by a simple evaporation technique, and optical and transport properties have been measured as a function of composition.
Journal ArticleDOI
Temperature dependence of the resistance of antimony nanowire arrays
TL;DR: In this article, the resistance of arrays of antimony hollow nanowires in porous anodic aluminum discs with channel diameters of 20 nm, 100 nm and 200 nm was determined by x-ray diffraction and scanning electron microscopy.
Journal ArticleDOI
Thickness dependence of DC conductivity of amorphous Se and binary amorphous SeTe, SeGe, and SeSb films
TL;DR: In this article, the authors measured the dc conductivity of a-Se and binary amorphous SeTe, SeGe, and SeSb films as a function of temperature (80 to 300 K) and film thickness (500 to 2000 A).
Journal ArticleDOI
Crystallization of amorphous antimony films
Journal ArticleDOI
Photoelectric properties of amorphous and crystalline films of antimony
TL;DR: The phase change has been detected by studying the variation of photoelectric emission with thickness for antimony films evaporated at pressures less than 5 × 10−8 Torr as mentioned in this paper.
References
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Journal ArticleDOI
The Growth and Structure of Thin Metallic Films
TL;DR: In this article, the structure of thin metallic films was studied by means of electron diffraction and electron microscopy, and the effects of varying experimental conditions on the film structure of selected metals were reported.
Journal ArticleDOI
Spitzenzähler und Zählrohr bei metallographischen Oberflächenuntersuchungen
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Über die irreversiblen Änderungen des elektrischen Widerstandes und des Lichtreflexionsvermögens von bei tiefen Temperaturen kondensierten Antimon-, Arsen-, Tellur-, Eisen- und Silberschichten
R. Suhrmann,W. Berndt +1 more
TL;DR: In this article, a plotzliche-irreversibel Widerstandsabnahme with zunehmender temperatures is proposed, in which the authors show that the Widersstands of Sb, Te-Schichten, As, Te, Fe, and Ag Schichten kondensiert and allmahlich auf Zimmertemperatur erwarmt.
Journal ArticleDOI
Properties of Gold Deposited at Liquid Air Temperature
P. G. Wilkinson,L. S. Birks +1 more
TL;DR: The number of defects and their characteristic decay energy increased rapidly with increasing rate of deposit in the range from 1 to 5 micrograms/cm2/min. as discussed by the authors showed that the gold film was made up of aggregations of discreet particles rather than a smooth continuous film.
Journal ArticleDOI
Der amorphe Zustand der Metalle
TL;DR: In this article, the amorphe Modifikation in das normale Metall uber, wobei sich die Eigenschaften sprunghaft andern, in dem die EIGENSchaften des Elements des Elements grundlegend verschieden sind von denen im kristallinen Zustand, also im normalen Metall.