Patent
Semiconductor conversion of optical-to-electrical energy
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TLDR
In this paper, an undoped region bounded by a tunneling junction of the order of the mean free path of an electron is assembled in series with larger thickness away from the light incident surface.Abstract:
Optical-to-electrical conversion is accomplished using an undoped region bounded by a tunneling junction of the order of the mean free path of an electron. A number of regions are assembled in series with larger thickness away from the light incident surface. The thickness and doping of the regions for maximum effectiveness in monochromatic light are tailored to produce similar quantities of carriers from the light. A nine section GaAs structure with 50 Å n + and p + tunneling bounding regions has a 90% quantum efficiency and delivers a 5 volt output with a 0.35 picosecond transit time.read more
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References
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Integrated optical detectors
TL;DR: In this paper, a plurality n of double heterostructure photodiodes are coupled together by interleaved n + p + tunnel junctions to form a multi-layered integrated structure which has an open circuit photovoltage approaching the sum of the individual photododes.
Patent
Planar P-I-N photodetectors
TL;DR: In this article, a light transducer is described in which a semi-insulating, single crystal body of light absorbing semiconductor material has a pair of spaced-apart epitaxial zones of opposite conductivity type integrally and electrically coupled to a surface of the body.
Proceedings ArticleDOI
Superlattice, graded band gap, channeling and staircase avalanche photodiodes towards a solid-state photomultiplier
Federico Capasso,W.T. Tsang +1 more
TL;DR: In this article, a new class of low excess noise avalanche photodiodes (APDs) are discussed and a significant enhancement of the ionization rates ratio has been demonstrated in AlGaAs/GaAs superlattice and graded gap APDs.
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