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Semiconductor Lithography: Principles, Practices, and Materials

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The article was published on 1987-12-31 and is currently open access. It has received 414 citations till now. The article focuses on the topics: Lithography.

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Features of gold having micrometer to centimeter dimensions can be formed through a combination of stamping with an elastomeric stamp and an alkanethiol ‘‘ink’’ followed by chemical etching

TL;DR: In this paper, a technique for patterning a self-assembled monolayer (SAM) on a gold substrate using an elastomer stamp was described, followed by selective etching in an aqueous, basic solution of cyanide ion and dissolved dioxygen (1M KOH, 0.1 M KCN).
Journal ArticleDOI

Enabling nanotechnology with self assembled block copolymer patterns

TL;DR: In this paper, a review of the current efforts to utilize block copolymers in nanotechnologies including nanostructured membranes, BCP templates for nanoparticle synthesis, photonic crystals, and high-density information storage media is presented.
Patent

Process for the production of thin semiconductor material films

TL;DR: In this paper, the process for the preparation of thin moncrystalline or polycrystaline semiconductor material films, characterized in that it comprises subjecting a semiconductor materials wafer having a planar face to the three following stages: a first stage of implantation by bombardment by ions creating in the volume of said wafer a layer (3) of gaseous microbubbles defining in the volumetric volume a lower region (6) constituting the mass of the substrate and an upper region (5) constituing the thin film, a second stage
Journal ArticleDOI

Wet etching of GaN, AlN, and SiC : a review

TL;DR: The wet etching of GaN, AlN, and SiC is reviewed in this paper, including conventional etching in aqueous solutions, electrochemical etch in electrolytes and defect-selective chemical etched in molten salts.