Patent
Sloped contact etch process
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TLDR
In this paper, the authors described a sloped contact etch, which has the steps of: etching a substrate 12 then removing the polymer that is produced during the substrate 12 etch These two steps are alternated until a desired depth is reached.Abstract:
The process described provides a sloped contact etch The process has the steps of: etching a substrate 12 then removing the polymer that is produced during the substrate 12 etch These two steps are alternated until a desired depth is reached Next, the resist 11 is etched followed by an etch of the substrate 12 This is then repeated until the required depth is reached By varying the duration and repetition of the etches, the slope of the etch can be regulatedread more
Citations
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References
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Patent
Method for tapered dry etching
TL;DR: In this paper, a photolithography-plasma dry etching method employing a positive photoresist mask such as poly(methyl methacrylate) which is capable of being isotropically eroded by plasma action is described.
Patent
Method of forming plasma etched semiconductor contacts
TL;DR: In this paper, it was shown that if the silicon semiconductor is converted to a metal silicide in the region where contact is to be made subsequently, its plasma etch rate can be reduced sufficiently to avoid overetching.
Patent
Method of fabricating a tapered via hole in polyimide.
TL;DR: In this paper, a method for fabricating a tapered via hole (16a) in a polyimide layer of an integrated circuit (10), including the steps of: disposing a layer of SiO2 (18) on the polyIMide layer (15), while simultaneously etching back the photoresist on the sidewalls of the opening to thereby uncover a strip (18a) adjacent to the perimeter of the exposed polyimides region (20), enlarging the exposed region of the polyimIDE (16) by etching (via etchant
Patent
Process for producing by sloping etching a thin film transistor with a self-aligned gate with respect to the drain and source thereof
TL;DR: In this paper, a self-aligned transistor with a selfaligned gate with respect to its drain and source and transistor obtained by sloping etching is presented, which is applied to the production of active matrixes for liquid crystal flat screens.
Journal ArticleDOI
Dry etching of tapered contact holes using multilayer resist
R. J. Saia,B. Gorowitz +1 more