Patent
Method of surface treatment of semiconductor substrates
Huma Ashraf,Jyoti Kiron Bhardwaj,David Mark Haynes,Janet Hopkins,Alan Michael Hynes,Babak Khamsehpour,Martin Edward Ryan +6 more
TLDR
In this article, a method of etching a trench in a semiconductor substrate in a reactor chamber using alternatively reactive ion etching and depositing a passivation layer by chemical vapour deposition is described.Abstract:
This invention relates to methods for treatment of semiconductor substrates and in particular a method of etching a trench in a semiconductor substrate in a reactor chamber using alternatively reactive ion etching and depositing a passivation layer by chemical vapour deposition, wherein one or more of the following parameters: gas flow rates, chamber pressure, plasma power, substrate bias, etch rate, deposition rate, cycle time and etching/deposition ratio vary with time.read more
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Patent
Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
TL;DR: In this article, a method for forming a MEMS device is disclosed, where a final release step is performed just prior to a wafer bonding step to protect the MEMS devices from contamination, physical contact, or other deleterious external events.
Patent
Plasma Processing Apparatus
TL;DR: In this paper, a plasmas processing apparatus consisting of plural layers formed in stack one upon another on a semiconductor wafer placed on the sample holder located in the process chamber is etched with plasma generated by supplying high frequency power to the electrode disposed in a sample holder, and a power source for supplying power at different values to the ring-shaped electrode depending on the sorts of layers of the layer structure.
Patent
Plasma processing apparatus
TL;DR: In this article, a plasma processing apparatus is configured to alternately introduce an etch gas and a deposition gas into the chamber through the at least on gas inlet, and to strike a plasma into the etch gases and the deposition gas alternately introduced in the chamber.
Patent
Method and apparatus for plasma dicing a semi-conductor wafer
Linnell Martinez,David Pays-Volard,Christopher D. Johnson,David W. Johnson,Russelll Westerman,Gordon M. Grivna +5 more
TL;DR: In this paper, a method for plasma dicing a substrate is presented, consisting of a process chamber having a wall, a plasma source adjacent to the wall of the process chamber, and a work piece support within the process chambers.
Patent
Gas pulsing for etch profile control
Kevin G. Donohoe,David S. Becker +1 more
TL;DR: Etch profile control with pulsed gas flow and its applications to etching such as anisotropic etching of high aspect ratio features and etchingof self-aligned contact structures in various processes are discussed in this article.
References
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Patent
Method of anisotropically etching silicon
Franz Laermer,Andrea Schilp +1 more
TL;DR: In this paper, anisotropic plasma etching of silicon is used to provide laterally defined recess structures therein through an etching mask employing a plasma, the method including anisotropically-plasmine etching, polymerizing in a polymerizing step at least one polymer former contained in the plasma onto the surface of the silicon during which the surfaces that were exposed in a preceding etching step are covered by a polymer layer thereby forming a temporary etching stop.
Patent
Method and apparatus for surface treatment by plasma
TL;DR: In this article, a controller is used as a mechanism for changing the quantity of gas introduced in a vacuum chamber, according to a predetermined program, or by signals obtained by detecting the surface conditions of the specimen during the surface treatment.
Patent
Trench etch process for a single-wafer RIE dry etch reactor
TL;DR: In this paper, a plasma dry etch process for trench etching in single slice RIE etch reactors is described, where a selective sidewall passivation is accomplished to control the profile of the trench being etched.
Patent
Dry etching by alternately etching and depositing
TL;DR: In this article, a dry etching method including the steps of introducing etching and deposition gases alternately into a reaction chamber at predetermined time intervals, etching the exposed surface of an article to be etched and applying deposition to the surface film thereof alternately, is characterized in that the power is applied after the passage of predetermined time from the start of the introduction of the deposition gas and before the etching gas is introduced and cut off when the introduction is suspended.
Patent
Plasma treating method and apparatus therefor
TL;DR: In this article, the etching step and the film formation step can be carried out alternately and the plasma treating time can be shortened, and a plasma treating apparatus comprises means for rendering a gas having a critical potential plasmic under a reduced pressure and means for changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential.