Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy

TLDR: In this article, the silicon-cerium oxide interface was studied using x-ray photoelectron spectroscopy and the oxidation and reduction of species at the interface were examined as a function of annealing temperature both in vacuum and oxygen ambient, in order to determine their relative stabilities.

Abstract: The silicon-cerium oxide interface is studied using x-ray photoelectron spectroscopy. The oxidation and reduction of species at the interface are examined as a function of annealing temperature both in vacuum and oxygen ambient, in order to determine their relative stabilities. By depositing a very thin CeO2 film (similar to 30 Angstrom), the cerium and silicon core level peaks can be monitored simultaneously. The presence of characteristic chemical shifts of the Si 2p peak gives information about any SiOx, layer that may form at the interface. The oxidation state of the cerium can be probed from three different areas of the spectrum. From this information we can infer the oxidation state of both the silicon and the cerium. For the first time a complete picture of the interface is obtained. The implications of these findings on the utility of CeO2 in device applications are discussed.