Journal ArticleDOI
Stoichiometry of thin silicon oxide layers on silicon
TLDR
In this paper, the composition of anodically and thermally grown silicon oxide layers was determined by backscattering and channeling measurements with 2.0 −MeV 4He+ ions.Abstract:
The composition of anodically and thermally grown silicon oxide layers was determined by backscattering and channeling measurements with 2.0‐MeV 4He+ ions. The oxide thickness was determined by ellipsometry and, for anodic films, the silicon removal rate was also determined by layer removal measurements. The surface layer consists of stoichiometric silicon dioxide plus a silicon‐rich transition layer between the substrate and the silicon dioxide. The number of silicon atoms in this layer was found to be 6 × 1015 atoms/cm2 (about three atomic layers).read more
Citations
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The silicon-silicon dioxide system: Its microstructure and imperfections
C R Helms,E H Poindexter +1 more
TL;DR: The microstructural features of the Si-SiO2 system and the chemical physics of its defects are reviewed and examined in this paper, where the role of atomic and molecular sized entities is emphasized, and the latter are limited to those containing only Si, O, H or combinations thereof.
Journal ArticleDOI
An Auger analysis of the SiO2‐Si interface
TL;DR: In this article, the authors discuss the SiO2•Si interface in terms of a morphology model which includes a natural interface roughness and inclusions of silicon in the oxide close to the interface.
Journal ArticleDOI
Reversibility of trapped hole annealing
TL;DR: In this article, Annealing under negative bias of metaloxide-semiconductor field effect transistors (MOSFETs) previously irradiated and annealed under positive bias is studied as a function of oxide field and time.
Journal ArticleDOI
Wetting of thin layers of SiO2 by water
TL;DR: In this paper, the authors measured the contact angle θ of water on silicon and on very thin layers of silicon dioxide grown on silicon, and showed that the interaction energy between water and the solid surface depends strongly on the oxide thickness.
Journal ArticleDOI
The anodic oxidation of superimposed metallic layers: theory
TL;DR: In this article, the anodic oxidation of one metal superimposed upon another is governed by several factors, the most important being the resistivity difference between the two oxides, and all observations can be accounted for.
References
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Journal ArticleDOI
Ion implantation of silicon. I. Atom location and lattice disorder by means of 1.0-MeV helium ion scattering
TL;DR: In this paper, the orientation dependence of the backscattering yield of a 1.0-MeV helium beam was investigated by studying the implantation behavior of Sb in silicon.
Journal ArticleDOI
Determination of the Properties of Films on Silicon by the Method of Ellipsometry
TL;DR: The use of exact reflection theory to interpret data allows the application of ellipsometry to the determination of the thicknesses and optical constants of surface films without the thickness limitations of approximate theory.
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Channeling‐Effect Analysis of Thin Films on Silicon: Aluminum Oxide
TL;DR: In this paper, the stochastic properties of thin amorphous films of aluminum oxide and silicon oxide on silicon-crystal substrates were measured using backscattered particle spectrum.
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Anodic oxidation as sectioning technique for the analysis of impurity concentration profiles in silicon
TL;DR: In this paper, the use of the ellipsometric method in the evaluation of refractive index and thickness of silicon anodic oxides is illustrated and discussed, together with the limits of accuracy of the technique.