Journal ArticleDOI
Structural, electrical, and luminescence characteristics of vacuum-annealed epitaxial (Ba,La)SnO 3 thin films
TLDR
In this article, the structural, electrical, and luminescence behaviors of La-doped BaSnO3 (LBSO) epitaxial films were intensively studied, and it was shown that Sn2+ defects and oxygen vacancies control the electrical properties of epitaxia.Abstract:
The correlation between the structural, electrical, and luminescence behaviors of La-doped BaSnO3 (LBSO) epitaxial films was intensively studied. We found that Sn2+ defects and oxygen vacancies control the electrical properties of epitaxial LBSO films that are grown on (001)-oriented SrTiO3 substrates using pulsed laser deposition. Under optimized deposition condition, the films exhibit room temperature resistivity of 16 mΩ·cm, with a mobility of 1.62 cm2V−1s−1. To further reduce the resistivity, the films were vacuum-annealed at various temperatures in the range from 600℃ to 900℃ and the film annealed at 600℃ exhibited the lowest room temperature resistivity of 5 mΩ·cm with the highest mobility of 3.09 cm2V−1s−1. The decrease of resistivity in the film vacuum-annealed at 600℃ originates from the higher concentration of Sn2+ ions and oxygen vacancies, which was also confirmed from photoluminescence studies, in which emission peaks associated with Sn2+ defects were observed at 710 and 910 nm. Raman analysis revealed the presence of defect states related to octahedral tilting in vacuum-annealed LBSO films. Our studies show that the electrical properties of epitaxial films could be controlled by the Sn2+ defects generated with oxygen vacancies during the vacuum-annealing of the films.
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Citations
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Journal ArticleDOI
Effects of vacuum annealing on the electron mobility of epitaxial La-doped BaSnO3 films
TL;DR: In this paper, the oxygen vacancies generated from vacuum annealing reduced the thermal stability of LBSO films on MgO substrates, which increased their carrier concentrations and lateral grain sizes at elevated temperatures.
Journal ArticleDOI
Oxygen vacancy driven mobility enhancement in epitaxial La-doped BaSnO3 from vacuum annealing
TL;DR: In this article, the mobility suppression in LBSO films can be lifted by a simple vacuum annealing process, which leads to simultaneous lateral grain growth and improves the carrier mobility.
Journal ArticleDOI
Unraveling the Oxygen Effect on the Properties of Sputtered BaSnO3 Thin Films
Bingcheng Luo,Junbiao Hu +1 more
TL;DR: The perovskite oxide BaSnO3 is a highly topical material for next-generation transparent conducting semiconductors as mentioned in this paper, and the foreign chemical doping strategy is largely used to realize the high conductivity.
Journal ArticleDOI
Highly conductive Nb doped BaSnO3 thin films on MgO substrates by pulsed laser deposition
TL;DR: Ba(Nb x Sn 1- x )O 3 (BNSO) films were epitaxially grown on (001) oriented MgO substrates with Nb doping content from 0.00 to 0.15 by pulsed laser deposition as mentioned in this paper.
Journal ArticleDOI
Structure-property relationships and mobility optimization in sputtered La-doped BaSn O 3 films: Toward 100 c m 2 V − 1 s − 1 mobility
William Postiglione,Koustav Ganguly,Hwanhui Yun,Jong Seok Jeong,Andrew Jacobson,Lindsey Borgeson,Bharat Jalan,K. Andre Mkhoyan,Chris Leighton +8 more
TL;DR: In this paper, the authors present an exhaustive optimization of the mobility of a wide band gap semiconducting perovskite (BaSn) thin film grown by a scalable, high-throughput method: high pressureoxygen sputter deposition.
References
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Journal ArticleDOI
High Mobility in a Stable Transparent Perovskite Oxide
Hyung Joon Kim,Useong Kim,Hoon Kim,Tai Hoon Kim,Hyo Sik Mun,Byung-Gu Jeon,Kwang Taek Hong,Woong-Jhae Lee,Chanjong Ju,Kee Hoon Kim,Kookrin Char +10 more
TL;DR: In this paper, La-doped BaSnO3 with the perovskite structure has an unprecedented high mobility at room temperature while retaining its optical transparency, and the maximum mobility reached 320 cm^2(Vs)^-1 at a doping level of 8x10^19 cm^-3, constituting the highest value among wideband gap semiconductors.
Journal ArticleDOI
Physical properties of transparent perovskite oxides (Ba,La)SnO 3 with high electrical mobility at room temperature
Hyung J. Kim,Useong Kim,Tai Hoon Kim,Ji Yeon Kim,Hoon Kim,Byung-Gu Jeon,Woong-Jhae Lee,Hyo Sik Mun,Kwang Taek Hong,Jaejun Yu,Kookrin Char,Kee Hoon Kim +11 more
TL;DR: Kim et al. as mentioned in this paper reported various physical properties of (Ba,La)SnO${}_{3}$ single crystals and epitaxial films including temperature-dependent transport and phonon properties, optical properties, and first-principles calculations.
Journal ArticleDOI
High Mobility in a Stable Transparent Perovskite Oxide
Hyung Joon Kim,Useong Kim,Hoon Kim,Tai Hoon Kim,Hyo Sik Mun,Byung-Gu Jeon,Kwang Taek Hong,Woong-Jhae Lee,Chanjong Ju,Kee Hoon Kim,Kookrin Char +10 more
TL;DR: In this paper, La-doped BaSnO3 with perovskite structure has an unprecedented high mobility at room temperature while retaining its optical transparency, reaching 320 cm2 V-1 s-1 at a doping level of 8×1019 cm-3, constituting the highest value among wideband-gap semiconductors.