Journal ArticleDOI
Structural Study of Tin‐Doped Indium Oxide Thin Films Using X‐Ray Absorption Spectroscopy and X‐Ray Diffraction I . Description of the Indium Site
TLDR
In this paper, an extended x-ray absorption fine structure (EXAFS) investigation revealed that the indium atomic environment is modified by the doping, and the first oxygen polyhedron and the metallic In-In coordination shells are disordered.Abstract:
Thin films of tin‐doped , with different tin contents produced by a powder pyrolysis technique have been investigated by x‐ray absorption spectroscopy and x‐ray diffraction. At the indium K‐edge, extended x‐ray absorption fine structure (EXAFS) investigations reveal that the indium atomic environment is modified by the doping. Even at low tin concentrations, the first oxygen polyhedron and the metallic In‐In coordination shells are disordered. This disorder increases with increasing tin content, and, for a large tin content (39% Sn), the In‐O shell is locally similar to that of the hexagonal high pressure phase of , that is also known to be stabilized at atmospheric pressure by the insertion of small foreign cation (such as Sn4+) in the indium oxide structure. The x‐ray diffraction experiments also support the idea of a disordered network; the x‐ray reflections decrease in magnitude but remain sharp even for a high tin concentration. This indicates that the structural disorder observed by EXAFS only induces a damping of the x‐ray reflections (the network is still ordered within large domains). The following modifications of the host network were observed; an increase in the lattice parameter, a decrease in the size of coherence of the diffraction domains with increasing the tin content (from 1200 A to 700 A), and a preferential orientation, which disappears for the high dopant concentrations.read more
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Journal ArticleDOI
Transparent conductive electrodes for electrochromic devices: A review
TL;DR: In this article, the optical and electrical properties of thin films that are useful as transparent electrodes in electrochromic devices are discussed, and the properties of certain heavily doped widebandgap semiconductor oxides (especially In2O3:Sn) and of metal films are discussed.
Journal ArticleDOI
Structural Studies of Tin-Doped Indium Oxide (ITO) and In4Sn3O12
TL;DR: In this paper, structural changes in the indium oxide lattice due to doping with Sn4+(ITO) were studied by Mossbauer spectroscopy, EXAFS, and neutron powder diffraction.
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Atmospheric pressure chemical vapor deposition of gallium doped zinc oxide thin films from diethyl zinc, water, and triethyl gallium
Jianhua Hu,Roy G. Gordon +1 more
TL;DR: In this article, the gallium doped zinc oxide films have been deposited in the temperature range 150 to 470°C from 0.05% diethyl zinc, 0.8% water, and various triethyl gallium concentrations.
Journal ArticleDOI
Transparent Conducting Oxides in the ZnO-In2O3-SnO2 System
TL;DR: The bulk subsolidus phase diagram can be used as a guide to understand the numerous and varied results reported for thin films as discussed by the authors, as well as the electrical and optical properties of various ZITO compositions.
Journal ArticleDOI
Photoinduced Defect Engineering: Enhanced Photothermal Catalytic Performance of 2D Black In 2 O 3− x Nanosheets with Bifunctional Oxygen Vacancies
Yuhang Qi,Lizhu Song,Shuxin Ouyang,Shuxin Ouyang,Xichen Liang,Shangbo Ning,Qiqi Zhang,Jinhua Ye,Jinhua Ye +8 more
TL;DR: This study reveals an exciting phenomenon that light is an ideal external stimulus on the layered In2 O3 system, and its electronic structure can be adjusted efficiently through photoinduced defect engineering; it can be anticipated that this synthesis strategy can be extended to wider application fields.