Book ChapterDOI
Study of High-Frequency Performance in GeSn-Based QWIP
Soumava Ghosh,Swagata Dey,Bratati Mukhopadhyay,Gopa Sen +3 more
- pp 448-452
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TLDR
In this paper, the high-frequency performance of GeSn-SiGeSn QWIP has been studied considering the intersubband transition and transit time effect of electrons, and the band structure and the analytical results of responsivity are also presented.Abstract:
QWIP using group IV elements are of great research attention for its potential application in optical communication and in optical interconnects. The high-frequency performance of GeSn–SiGeSn QWIP has been studied considering the intersubband transition and transit time effect of electrons. The band structure of GeSn–SiGeSn QWIP and the analytical results of responsivity are also presented in this paper.read more
References
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Journal ArticleDOI
Ge–Sn semiconductors for band-gap and lattice engineering
M. Bauer,M. Bauer,J. Taraci,J. Taraci,J. Tolle,J. Tolle,Andrew Chizmeshya,Stefan Zollner,Stefan Zollner,David J. Smith,Jose Menendez,Changwu Hu,Changwu Hu,John Kouvetakis +13 more
TL;DR: In this paper, a class of Si-based semiconductors in the Ge1−xSnx system is described, which is completely characterized by Rutherford backscattering, low-energy secondary ion mass spectrometry, high-resolution transmission electron microscopy, x-ray diffraction (rocking curves), as well as infrared and Raman spectroscopies and spectroscopic ellipsometry.
Journal ArticleDOI
Type-I Ge∕Ge1−x−ySixSny strained-layer heterostructures with a direct Ge bandgap
Jose Menendez,John Kouvetakis +1 more
TL;DR: In this paper, the electronic properties of Ge∕Ge1−x−ySixSny strained-layer heterostructures are predicted theoretically and the required level of tensile strain in the Ge layers is compatible with Si-Ge technology.
Journal ArticleDOI
Strain-Balanced ${\rm Ge}_{z}{\rm Sn}_{1-z}\hbox{--}{\rm Si}_{x}{\rm Ge}_{y}{\rm Sn}_{1-x-y}$ Multiple-Quantum-Well Lasers
TL;DR: In this article, a strain-balanced GezSn1-z-6Geysn1-x-y multiple-quantum-well (MQW) laser was proposed and analyzed.
Journal ArticleDOI
DX -center formation in wurtzite and zinc-blende Al x Ga 1 − x N
TL;DR: In this article, the transition from shallow to deep centers as a function of pressure or alloying was investigated for oxygen and silicon donors in GaN and AlN, based on first-principles total energy calculations.
Book
Silicon Photonics: Fundamentals and Devices
M. Jamal Deen,P. K. Basu +1 more
TL;DR: In this paper, the authors provide an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, including: n Basic Properties of Silicon n Quantum Wells, Wires, Dots and Superlattices n Absorption Processes in Semiconductors n Light Emitters in Silicon n Photodetectors, Photodiodes and Phototransistors n Raman Lasers including Raman Scattering n Guided Lightwaves n Planar Waveguide Devices n Fabrication Techniques and Material Systems