Journal ArticleDOI
Symmetric toggle switch—a new type of rf MEMS switch for telecommunication applications: Design and fabrication
Kamaljit Rangra,Benno Margesin,Leandro Lorenzelli,Flavio Giacomozzi,Cristian Collini,Mario Zen,Giovanni Soncini,Laura del Tin,R. Gaddi +8 more
TLDR
In this paper, a symmetric toggle switch (STS) is proposed for 8-14 GHz applications with low actuation voltage and high isolation, for high power and reliability applications in telecommunication.Abstract:
In this paper, we present a new type of rf MEMS switch with low actuation voltage and high isolation, for high rf power and reliability applications in telecommunication. ‘Symmetric toggle switch’ (STS) is based on push–pull mechanism and utilizes torsion springs and levers, placed symmetrically and transverse to CPW line. The switches designed for 8–14 GHz applications have analytically calculated and FEM simulated actuation voltages in the range of 8–10 V. The simulated insertion loss and isolation for the devices are 0.25 and 35 dB, respectively, at 10 GHz. The fabrication process and preliminary experimental results are also presented.read more
Citations
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Journal ArticleDOI
Design of novel compact anti-stiction and low insertion loss RF MEMS switch
TL;DR: In this article, a novel torsional RF MEMS capacitive switch design on silicon substrate is presented, which optimized switch topology such as reduction in up-state capacitance results in insertion loss better than 0.1 dB till 20 GHz.
Journal ArticleDOI
Design and investigation of a low insertion loss, broadband, enhanced self and hold down power RF-MEMS switch
Mahesh Angira,Kamaljit Rangra +1 more
TL;DR: In this article, a low insertion loss capacitive shunt RF-MEMS switch with float metal concept is proposed to reduce the capacitance in up-state of the device.
Journal ArticleDOI
Comprehensive Study on RF-MEMS Switches Used for 5G Scenario
TL;DR: This paper presents a comprehensive study on radio frequency-microelectromechanical systems (RF-MEMS) switches, which are expected to be extensively integrated into 5G infrastructures and can be beneficial for further RF-Mems switches’ design and improvement.
Journal ArticleDOI
Development of shunt type ohmic RF MEMS switches actuated by piezoelectric cantilever
TL;DR: In this article, the authors presented the design, fabrication, and characterization of shunt type ohmic RF MEMS switches actuated by piezoelectricity, which can be operated at an extremely low operation voltage of 5V with a negligible power consumption of less than 0.1μW.
Journal ArticleDOI
Design and development of a surface micro-machined push-pull-type true-time-delay phase shifter on an alumina substrate for Ka-band T/R module application
Sukomal Dey,Shiban K. Koul +1 more
TL;DR: In this paper, a push-pull-type DMTL phase shifter based on the distributed MEMS transmission line (DMTL) concept was designed and optimized with an analytical method and validated with simulation.
References
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Journal ArticleDOI
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TL;DR: In this paper, the authors concentrate on electrostatic switches at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques.
Journal ArticleDOI
Micromachined low-loss microwave switches
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Electromechanical considerations in developing low-voltage RF MEMS switches
TL;DR: In this article, the design, fabrication, and testing of a low-actuation voltage Microelectromechanical systems (MEMS) switch for high-frequency applications is described.
Journal ArticleDOI
Pull-in study of an electrostatic torsion microactuator
TL;DR: In this paper, pull-in analysis of an electrostatic torsion microactuator is presented for a microtorsion mirror and a polynomial algebraic equation for the pullin voltage and angle of a TMS is derived.